Publications

Affichage de 9251 à 9260 sur 16278


  • Communication dans un congrès

Low-temperature zero-level packaging technique using photoresitive film type PerMX polymer

S. Seok, J. Kim, N. Rolland, P.A. Rolland

16th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS'11, 2011, Beijing, China. pp.334-337, ⟨10.1109/TRANSDUCERS.2011.5969463⟩. ⟨hal-00799979⟩

  • Article dans une revue

Specific absorption rate (SAR) distribution in the human head at global system mobil (GSM) frequencies

S. Bri, S. Kassimi, M. Habibi, A. Mamouni

European Journal of Scientific Research, 2011, 49, pp.590-600. ⟨hal-00572657⟩

  • Article dans une revue

Negative refraction of longitudinal waves in a two-dimensional solid-solid phononic crystal

Charles Croënne, E.D. Manga, B. Morvan, A. Tinel, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.054301-1-5. ⟨10.1103/PhysRevB.83.054301⟩. ⟨hal-00572641⟩

  • Article dans une revue

UWB multiple access communication system

F. Elbahhar, Atika Rivenq, Jean-Michel Rouvaen, M. Heddebaut

Wireless Personal Communications, 2011, 56, pp.333-352. ⟨10.1007/s11277-009-9835-8⟩. ⟨hal-00572654⟩

  • Communication dans un congrès

Anisotropic transport of InAs/AlSb heterostructures grown on InP substrates

G. Moschetti, H. Zhao, P.A. Nilsson, S. Wang, A. Kalabukhov, Gilles Dambrine, S. Bollaert, L. Desplanque, X. Wallart, J. Grahn

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Catania, Italy. pp.17-18. ⟨hal-00799700⟩

  • Chapitre d'ouvrage

Low frequency acoustic devices for viscoelastic complex media characterization

Georges Nassar

Beghi M.G. Acoustic waves - From microdevices to helioseismology, InTech, Chapter 10, 213-238, 2011, ISBN 978-953-307-572-3. ⟨hal-00799656⟩

  • Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled…

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩

  • Article dans une revue

Structural, ferroelectric and dielectric properties of In2O3:Sn (ITO) on PbZr0.53 Ti 0.47O3 (PZT)/Pt and annealing effect

L. Kerkache, A. Layadi, El Hadj Dogheche, Denis Remiens

Journal of Alloys and Compounds, 2011, 509, pp.6072-6076. ⟨10.1016/j.jallcom.2011.03.022⟩. ⟨hal-00591328⟩