Publications

Affichage de 9331 à 9340 sur 16278


  • Communication dans un congrès

Anisotropic transport of InAs/AlSb heterostructures grown on InP substrates

G. Moschetti, H. Zhao, P.A. Nilsson, S. Wang, A. Kalabukhov, Gilles Dambrine, S. Bollaert, L. Desplanque, X. Wallart, J. Grahn

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Catania, Italy. pp.17-18. ⟨hal-00799700⟩

  • Article dans une revue

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

H.A. Nilsson, P. Caroff, E. Lind, M.E. Pistol, C. Thelander, L.E. Wernersson

Journal of Applied Physics, 2011, 110, pp.064510-1-4. ⟨10.1063/1.3633742⟩. ⟨hal-00639829⟩

  • Chapitre d'ouvrage

Low frequency acoustic devices for viscoelastic complex media characterization

Georges Nassar

Beghi M.G. Acoustic waves - From microdevices to helioseismology, InTech, Chapter 10, 213-238, 2011, ISBN 978-953-307-572-3. ⟨hal-00799656⟩

  • Autre publication scientifique

Tunneling spectroscopy of hetero-nanocrystals

Thanh Hai Nguyen

2011. ⟨hal-00799435⟩

  • Autre publication scientifique

Développements de capacités variables en technologie silicium pour les applications RF et mmW

Romain Debroucke

2011. ⟨hal-00799451⟩

  • Article dans une revue

Effects of crystal phase mixing on the electrical properties of InAs nanowires

C. Thelander, P. Caroff, S.R. Plissard, A.W. Dey, K.A. Dick

Nano Letters, 2011, 11, pp.2424-2429. ⟨10.1021/nl2008339⟩. ⟨hal-00603006⟩

  • Communication dans un congrès

Near-field scanning microscopy in liquid media based on microwave interferometry

Kamel Haddadi, D. Glay, T. Lasri

9th International Conference on Electromagnetic Wave Interaction with Water and Moist Substances, ISEMA 2011, 2011, United States. pp.185-192. ⟨hal-00603113⟩

  • Article dans une revue

Parameter space mapping of InAs nanowire crystal structure

Kimberly A. Dick, Jessica Bolinsson, Maria E. Messing, Sebastian Lehmann, Jonas Johansson, Philippe Caroff

Crystal structure and defects have been shown to have a strong impact on III-V nanowire properties. Recently, it was demonstrated that the issue of random stacking and polytypism in semiconductor nanowires can often be controlled using accessible growth parameters (such as temperature, diameter,…

Journal of Vacuum Science and Technology, 2011, 29 (4), pp.04D103-1-9. ⟨10.1116/1.3593457⟩. ⟨hal-00603098⟩