Publications

• Article dans une revue

Statistical channel model based on alpha-stable random processes and application to the 60 GHz ultra wide band channel

N. Azzaoui, Laurent Clavier

IEEE Transactions on Communications, 2010, 58, pp.1457-1467. ⟨10.1109/TCOMM.2010.05.090069⟩. ⟨hal-00548612⟩

• Communication dans un congrès

Development of a functional model for the nanoparticle-organic memory transistor

O. Bichler, W. Zhao, G. Gamrat, F. Alibart, S. Pleutin, D. Vuillaume

IEEE International Symposium on Circuits and Systems, ISCAS 2010, 2010, France. pp.1663-1666, ⟨10.1109/ISCAS.2010.5537487⟩. ⟨hal-00549960⟩

• Communication dans un congrès

Continuous wave terahertz photomixer from low temperature grown GaAs with high carrier mobility

H. Tanoto, Q.Y. Wu, J.H. Teng, M. Sun, Z.N. Chen, T. Htoo, S.J. Chua, Jean-Francois Lampin, A. Gokarna, El Hadj Dogheche

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612417⟩. ⟨hal-00549948⟩

• Communication dans un congrès

Sputtered indium tin oxide thin films deposited on glass substrate for photovoltaic application

L. Kerkache, A. Layadi, F. Hadjersi, El Hadj Dogheche, A. Gokarna, A. Stolz, Mathieu Halbwax, Jean-Pierre Vilcot, Didier Decoster, Basma El Zein, S.S. Habib

International Conference on Renewable Energies and Power Quality, ICREPQ'10, 2010, France. pp.1-3. ⟨hal-00549979⟩

• Article dans une revue

Towards the 3-D Microfabrication and Integration of a Complete Power Unit Used for Energy Autonomous Wireless System

Tristan Pichonat, C. Lethien, D. Hourlier-Bahloul, Nicolas Tiercelin, David Troadec, Paul Alain Rolland

This paper deals with the fabrication of an all-solid lithium-ion microbattery for autonomous wireless sensors networks nodes, focusing especially on the solid electrolyte and the negative electrode made of silicon nanowires. Regarding the electrolyte, amorphous thin solid films of lithium…

ECS Transactions, 2010, 25 (35), pp.11 - 21. ⟨10.1149/1.3414000⟩. ⟨hal-03192890⟩

• Communication dans un congrès

Radiation pattern measurements of an integrated TEM horn antenna

Jean-Francois Lampin, Guillaume Ducournau, Alexandre Beck, Damien Ducatteau, Emilien Peytavit, Tahsin Akalin

A TEM horn antenna is integrated with a uni-travelling-carrier photodiode. Its radiation pattern is measured from 280 to 540 GHz thanks to a 1.55 μm photomixing set-up and a sub-harmonic mixer. The direction the main lobe shifts to a lower incidence when the frequency is increased.

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612961⟩. ⟨hal-00549955⟩

• Communication dans un congrès

Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics

Yannick Roelens, A. Olivier, L. Desplanque, A. Noudeviwa, Francois Danneville, Nicolas Wichmann, X. Wallart, S. Bollaert

68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩. ⟨hal-00549924⟩

• Communication dans un congrès

100mV noise performances of Te-doped Sb-HEMT

A. Noudeviwa, A. Olivier, Yannick Roelens, Francois Danneville, Nicolas Wichmann, N. Waldhoff, L. Desplanque, X. Wallart, S. Bollaert

8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩. ⟨hal-00549922⟩

• Communication dans un congrès

Effets du facteur d'émission spontanée et de la densité de courant sur le temps de retard des lasers à cascades quantiques

A. Hamadou, D. Nehari, S. Lamari, Jean-Luc Thobel

International Conference on Optics, Photonics and their Applications, ICOPA 2010, 2010, Algiers, Algérie. ⟨hal-00591741⟩

• Communication dans un congrès

Design and fabrication of a 45GHz MMIC oscillator based on InP/GaAsSb/InP DHBT process

Sylvain Laurent, Antonio Augusto Lisboa de Souza, Jean-Christophe Nallatamby, Michel Prigent, Virginie Nodjiadjim, Muriel Riet

This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was fabricated by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-μm-long two-finger emitter. The complete nonlinear modeling of…

Workshop on (INMMIC) 2010, Apr 2010, Göteborg, Sweden. pp.54-57, ⟨10.1109/INMMIC.2010.5480139⟩. ⟨hal-00606461⟩