Publications

• Article dans une revue

Explosive dynamics and localization of wave triads in a coupled magnetoelastic system

Vladimir Preobrazhensky, Olivier Bou Matar, Philippe Pernod

Physical Review E : Statistical, Nonlinear, and Soft Matter Physics [2001-2015], 2008, 78, pp.046603-1-4. ⟨10.1103/PhysRevE.78.046603⟩. ⟨hal-00356658⟩

• Article dans une revue

MOSFETs RF noise optimization via channel engineering

T.C. Lim, R. Valentin, Gilles Dambrine, Francois Danneville

IEEE Electron Device Letters, 2008, 29, pp.118-121. ⟨10.1109/LED.2007.911293⟩. ⟨hal-00356661⟩

• Article dans une revue

Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure

Nicolas Tiercelin, Abdelkrim Talbi, Vladimir Preobrazhensky, Philippe Pernod, V. Mortet, K. Haenen, A. Soltani

Applied Physics Letters, 2008, 93, pp.162902-1-3. ⟨10.1063/1.3001601⟩. ⟨hal-00356659⟩

• Article dans une revue

Coupled finite element : series expansion method for the modeling of directional piezoelectric sources radiating in an elastic formation

Madjid Berraki, Bertrand Dubus, Axelle Baroni

A numerical method is proposed to describe, in the frequency domain, the elastic waves radiated from a piezoelectric transducer in an infinite elastic formation in the rotational symmetric case. It relies upon the coupling between the Finite Element Method, to model the transducer and the…

Acta Acustica united with Acustica, 2008, 94 (5), pp.656-667. ⟨10.3813/AAA.918080⟩. ⟨hal-00356650⟩

• Communication dans un congrès

Carbon nanotubes as electrodes for molecular electronics : from SAMs to single-molecule connection

G. Robert, F. Moggia, N. Lidgi-Guigui, S. Streiff, Vincent Derycke, A. Filoramo, S. Campidelli, M.G. Goffman, Bruno Jousselme, Serge Palacin, S. Lenfant, D. Vuillaume, J.P. Bourgoin

9th Trends in Nanotechnology International Conference, TNT2008, 2008, Oviedo, Spain. ⟨hal-00361621⟩

• Communication dans un congrès

Carbon nanotubes/self-assembled monolayers hybrid devices

G. Robert, F. Moggia, N. Lidgi-Guigui, S. Streiff, Vincent Derycke, A. Filoramo, S. Campidelli, M.F. Goffman, Bruno Jousselme, Serge Palacin, S. Lenfant, D. Vuillaume, J.P. Bourgoin

Indo-French Workshop on Multifunctional Molecular and Hybride Devices, 2008, Saclay, France. ⟨hal-00361585⟩

• Article dans une revue

Sagittal acoustic waves in finite solid-fluid superlattices: band-gap structure, surface and confined modes, and omnidirectional reflection and selective transmission

Y. El Hassouani, E.H. El Boudouti, Bahram Djafari-Rouhani, H. Aynaou

Using a Green’s function method, we present a comprehensive theoretical analysis of the propagation of sagittal acoustic waves in superlattices (SLs) made of alternating elastic solid and ideal fluid layers. This structure may exhibit very narrow pass bands separated by large stop bands. In…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.174306-1-23. ⟨10.1103/PhysRevB.78.174306⟩. ⟨hal-00357386⟩

• Communication dans un congrès

Acoustical properties characterization of a composite made of SU-8 and nanoparticules for BioMEMS application

Julien Carlier, Pierre Campistron, Dorothée Debavelaere-Callens, Caroline Soyer, Bertrand Nongaillard, S. Wang, X. Zhao

The photoresist SU‐8 (often used in microtechnology) has been acoustically characterized at the frequency of 1 GHz thanks to ZnO transducers. This material will be used to achieve acoustical matching between silicon and water at this frequency and a gain of about 5 dB has been obtained using the…

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. pp.4979-4983, ⟨10.1121/1.2934923⟩. ⟨hal-00361158⟩

• Communication dans un congrès

Design of III-nitride multi-layer structures for optical and surface acoustic wave interaction

Samuel Dupont, Jean-Claude Kastelik, V. Zhang, F. Causa, Q. Meng, J. Sarma

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. ⟨hal-00362062⟩

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction…

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩