Publications

• Article dans une revue

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, D. Theron, B. Boudart, Virginie Hoel, Marie Germain, Jean-Claude de Jaeger, S. Delage

The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the…

Electronics Letters, 2005, 41 (1), ⟨10.1049/el:20056735⟩. ⟨hal-01646906⟩

• Article dans une revue

Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate

G. Larrieu, Emmanuel Dubois

This paper demonstrates the successful integration of Schottky barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB MOSFETs are shown to steadily progress with respect to conventional highly doped source/drain with a…

IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2720-2726. ⟨10.1109/TED.2005.859703⟩. ⟨hal-00138397⟩

• Article dans une revue

The effect of LaNiO3 bottom electrode thickness on ferroelectric and dielectric properties of (100) oriented PbZr0.53Ti0.47O3 films

G.S. Wang, Denis Remiens, Caroline Soyer, El Hadj Dogheche, Eric Cattan

The (1 0 0) oriented LaNiO3 (LNO) films with different thickness were prepared on SiO2/Si substrate by a modified metallorganic decomposition process. PbZr0.53Ti0.47O3 (PZT) films (∼1 μm) subsequently deposited on LNO by modified sol–gel process. The X-ray diffraction measurements show PZT films…

Journal of Crystal Growth, 2005, 284 (1-2), pp.184-189. ⟨10.1016/j.jcrysgro.2005.07.014⟩. ⟨hal-00130818⟩

• Article dans une revue

CBr4 and Be heavily doped InGaAs grown in a production MBE system

S. Godey, S. Dhellemmes, A. Wilk, M. Zaknoune, F. Mollot

Journal of Crystal Growth, 2005, 278, pp.600-603. ⟨hal-00154907⟩

• Communication dans un congrès

Terahertz emission and noise spectra in HEMTs

J. Mateos, S. Perez, D. Pardo, T. Gonzalez, J. Lusakowski, N. Dyakonova, W. Knap, S. Bollaert, Yannick Roelens, A. Cappy, J.F. Millithaler, L. Varani

Terahertz emission and noise spectra in HEMTs, L. Reggiani, 2005, Lecce, Italy. pp.423-430, ⟨10.1063/1.2138647⟩. ⟨hal-00154897⟩

• Communication dans un congrès

Low frequency and linear high frequency noise performances of AlGaN/GaN grown on SiC substrate

Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Laurent Bary, Christophe Chambon, Sébastien Gribaldo, Olivier Llopis, Laurent Escotte, Robert Plana, S. Delage, Christophe Gaquière, Jacques Graffeuil

2005, pp.277-280. ⟨hal-00154917⟩

• Article dans une revue

Evaluation of residual stress profiles using the Barkhausen noise effect to verify high performance aerospace bearings

S. Devaux, Marc Duquennoy, J. Gualandrii, Mohammadi Ouaftouh, Mohamed Ourak

NDT & E International, 2005, 20, pp.9-24. ⟨hal-00140392⟩

• Communication dans un congrès

Research in acoustics at the IEMN

Mohammadi Ouaftouh

Euro-African Workshop on Acoustics, 2005, Marrakech, Morocco. ⟨hal-00140399⟩

• Communication dans un congrès

Dimensionnement de structures par ultrasons-lasers

Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

3èmes Journées Ultrasons-Laser, 2005, Louvain, Belgique. ⟨hal-00140398⟩

• Communication dans un congrès

Ultrasonic estimation of residual stress distribution in flat glass tempering

D. Devos, Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot, Mohamed Ourak

Proceedings of the 3rd International Conference of the African Materials Research Society, 2005, Marrakech, Morocco. ⟨hal-00140795⟩