Publications

• Article dans une revue

Evolution of the density of states from a two- to a zero-dimensional semiconductor

Zeger Hens, B. Grandidier, D. Deresmes, Guy Allan, Christophe Delerue, Didier Stiévenard, Daniel Vanmaekelbergh

Lead selenide nanocrystals have been electrodeposited on gold(111) with a high degree of control over their dimensions, giving rise to isolated nanocrystals with different edge-to-height aspect ratio. The electron density of states (DOS) of individual nanocrystals as a function of their aspect…

EPL - Europhysics Letters, 2004, 65, pp.809-815. ⟨10.1209/epl/i2003-10130-3⟩. ⟨hal-00141246⟩

• Communication dans un congrès

Analysis of hot carrier aging degradation in GaN MESFETs

R. Pierobon, F. Rampazzo, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni

2004, pp.143-146. ⟨hal-00141969⟩

• Article dans une revue

Raman characterization of Mg⁺ ion-implanted GaN

B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M.A. Poisson

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm-2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes…

• Communication dans un congrès

Transposition of a base band UWB impulse radio signal at 60 GHz for high data rate multiple access indoor communication systems

N. Deparis, Christophe Loyez, M. Fryziel, N. Rolland, P. Rolland

2004, pp.253-256. ⟨hal-00142278⟩

• Ouvrages

Organic field effect transistors : towards molecular scale

G. Horowitz, F. Biscarini, D. Vuillaume

Elsevier, 177 p., 2004. ⟨hal-00133401⟩

• Communication dans un congrès

Modelisation et simulation de la technlogie MOS ultimes

E. Lampin, Christophe Krzeminski, T. Alkalin, V. Cuny

GDR Nanoélectronique, 2004, Aussois, France. ⟨hal-00140992⟩

• Communication dans un congrès

Design and modeling of microwave applicators and antennas for medical applications

Luc Dubois, Pierre-Yves Cresson, C. Ricard, Nicolas Bernardin, Joseph Pribetich

International Symposium on Microwave Science and its Application to Related Fields, Jul 2004, Takamatsu, Japan. ⟨hal-00133926⟩

• Article dans une revue

Measure of the temperature-depth profile by an S band radiometric receiver for biomedical applications

S. Bri, L. Zenkouar, A. Saadi, L. Bellarbi, M. Habibi, A. Mamouni

Annals of Telecommunications - annales des télécommunications, 2004, 59, pp.467-484. ⟨hal-00133928⟩

• Article dans une revue

Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates

F Medjdoub, F. Dessenne, Jean-Luc Thobel, M. Zaknoune, D. Theron

This paper deals with the problem of ohmic contacts modeling for Monte Carlo simulation of high electron mobility transistors (HEMT). As it is practically impossible to simulate ohmic contacts, they are replaced by boundary conditions (BC). The simulated behaviour of devices is strongly influenced…

Solid-State Electronics, 2004, 48 (5), pp.683-688. ⟨10.1016/j.sse.2003.09.011⟩. ⟨hal-00133956⟩

• Communication dans un congrès

100nm InAlAS/InGaAs double-gate HEMT using transferred substrate

Nicolas Wichmann, I. Duszynski, S. Bollaert, J. Mateos, X. Wallart, A. Cappy

2004, pp.1023-1026. ⟨hal-00133886⟩