Publications

Affichage de 14831 à 14840 sur 16434


  • Chapitre d'ouvrage

Noise modeling and measurement techniques in deep submicron SOI devices

Francois Danneville, Gilles Dambrine

Balandin A. Noise and Fluctuations Control in Electronic Devices, American Scientific Publishers, pp.355-365, 2002. ⟨hal-00577023⟩

  • Chapitre d'ouvrage

Growth of PbTiO3/Pb[Zr,Ti]O-3 heterostructures by sputtering on Si substrate : influence of a buffer layer on the structural and electrical properties of Pb[Zr,Ti]O-3

Denis Remiens

Pandalai S.G. Crystal growth in thin solid films - Control of epitaxy, Research Signpost, Kerala, India, pp.71-86, 2002. ⟨hal-00577027⟩

  • Communication dans un congrès

0.12µm gate length In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar, J. Mateos

2002, pp.101-105. ⟨hal-00152950⟩

  • Article dans une revue

Experimental study of hot-electron inelastic scattering rate in p-type InGaAs

D. Sicault, R. Teissier, F. Pardo, J.L. Pelouard, F. Mollot

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, 12, pp.121301. ⟨hal-00018482⟩

  • Autre publication scientifique

Transport électronique dans l'ADN

T. Heim

2002. ⟨hal-00148694⟩

  • Article dans une revue

Statics and dynamics in giant magnetostrictive TbxFe1-xFe0.6Co0.4 multilayers for MEMS

Jamal Ben Youssef, Nicolas Tiercelin, Fabienne Petit, Henri Le Gall, Vladimir Preobrazhensky, Philippe Pernod

IEEE Transactions on Magnetics, 2002, 38, pp.2817-2819. ⟨hal-00148689⟩

  • Article dans une revue

Ineslastic electron tunnelling spectroscopy : capabilities and limitations in metal-oxide-semiconductor devices

G. Salace, C. Petit, D. Vuillaume

Journal of Applied Physics, 2002, 91, pp.5896-5901. ⟨hal-00148712⟩

  • Article dans une revue

Dynamics of solid-state parametric WPC amplifier of ultrasound with matching layer at interface of active medium-liquid

Andrey Brysev, R. Klopotov, Leonid Krutyansky, Philippe Pernod, Vladimir L. Preobrazhensky

Physics of Vibrations, 2002, 10, pp.121-124. ⟨hal-00250217⟩

  • Article dans une revue

Experimental study of hot-electron inelastic scattering rate in p-type InGaAs

D. Sicault, R. Teissier, F. Pardo, J.L. Pelouard, F. Mollot

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, pp.121301/1-4. ⟨hal-00250208⟩