Publications
Affichage de 14901 à 14910 sur 16545
Ineslastic electron tunnelling spectroscopy : capabilities and limitations in metal-oxide-semiconductor devices
G. Salace, C. Petit, D. Vuillaume
Journal of Applied Physics, 2002, 91, pp.5896-5901. ⟨hal-00148712⟩
Dynamics of solid-state parametric WPC amplifier of ultrasound with matching layer at interface of active medium-liquid
Andrey Brysev, R. Klopotov, Leonid Krutyansky, Philippe Pernod, Vladimir L. Preobrazhensky
Physics of Vibrations, 2002, 10, pp.121-124. ⟨hal-00250217⟩
Experimental study of hot-electron inelastic scattering rate in p-type InGaAs
D. Sicault, R. Teissier, F. Pardo, J.L. Pelouard, F. Mollot
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, pp.121301/1-4. ⟨hal-00250208⟩
Detection and characterisation of underground cavities using high resolution seismic (HRSR)
L. Driad, Bogdan Piwakowski
8th Meeting of Environmental and Engineering Geophysics Society-European Section, 2002, Portugal. pp.31-34. ⟨hal-00250190⟩
Measurement of ultrasonic attenuation and Rayleigh wave dispersion for testing concrete with subsurface damage
M. Goueygou, S. Ould Naffa, Bogdan Piwakowski, A. Fnine, F. Buyle-Bodin
IEEE International Ultrasonics Symposium, 2002, Germany. pp.1/861-864, ⟨10.1109/ULTSYM.2002.1193533⟩. ⟨hal-00250219⟩
La filière GaN pour les applications hyperfréquences
Christophe Gaquière, Raphaël Aubry, Yannick Guhel, A. Minko, Nicolas Vellas, Matthieu Werquin, B. Boudart, Zahia Bougrioua, Simone Cassette, Yvon Cordier, Sylvain Laurent Delage, E. Delos, Jean-Claude de Jaeger, Damien Ducatteau
9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aygulf, France. ⟨hal-00149734⟩
Etude des contacts ohmiques et Schottky sur nitrure de gallium pour composants à effets de champ
Christophe Gaquière, Raphaël Aubry, Yannick Guhel, A. Minko, Nicolas Vellas, Matthieu Werquin, B. Boudart, Simone Cassette, Yvon Cordier, Sylvain Laurent Delage, E. Delos, Jean-Claude de Jaeger, Damien Ducatteau, H. Gerard
GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149717⟩
Load impedance influence of the IDD(VDS) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz
Nicolas Vellas, Christophe Gaquière, Frédéric Bue-Erkmen, Yannick Guhel, B. Boudart, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger
IEEE Electron Device Letters, 2002, 23, pp.246-249. ⟨hal-00149699⟩
Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
S.L. Bravina, Eric Cattan, N.V. Morozovsky, Denis Remiens
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2002, 5, pp.89-94. ⟨hal-00250394⟩
Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ?
Xavier Wallart, Catherine Priester, D. Deresmes, Thomas Gehin, Francis Mollot
Applied Physics Letters, 2002, 81, pp.1060-1062. ⟨hal-00018491⟩