Publications

Affichage de 3601 à 3610 sur 16549


  • Brevet

Method for manufacturing a varactor diode and a bipolar transistor

Pascal Chevalier, Alexis Gauthier, Gregory Avenier

France, Patent n° : FR3098015 (A1) 2021-01-01. 2021, N° de priorité : FR20190007149 20190628. ⟨hal-05639334⟩

  • Communication dans un congrès

Bias-dependence of surface charge at low temperature in GaN self-switching diodes

E. Perez-Martin, I. Iniguez-De-La-Torre, T. Gonzalez, Christophe Gaquière, J. Mateos

In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence…

13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Sevilla, Spain. pp.90-93, ⟨10.1109/CDE52135.2021.9455737⟩. ⟨hal-03362256⟩