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19 mW/μm² and 24.5 % PAE at 94 GHz for 0.30-μm Transferred InP/GaAsSb DHBT on Si-HR

Abdelmalek Zemour, Malek Zegaoui, Yannick Roelens, Etienne Okada, Pascal Chevalier, Mohammed Zaknoune

InP HBT technology is a suitable candidate for the future 6G networks that require very high bandwidth. It has already demonstrated high-frequency operation with fmax exceeding 1 THz [1]. However, this performance comes at the cost of aggressive scaling which increases thermal resistance (Rth) due…

DRC 2025 | The 83rd Device Research Conference, Jun 2025, Duke University, Durham, North Carolina, United States. ⟨hal-05145163⟩