Publications

• Communication dans un congrès

Fabrication, characterization and analysis of AlN thin films grown on HR-silicon by MBE and PVD methods

N. Defrance, Marie Lesecq, F. Lecourt, Virginie Hoel, Jean-Claude de Jaeger

11th Expert Meeting on Evaluation & Control of Coumpound Semiconductor Materials and Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801190⟩

• Communication dans un congrès

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt, N. Defrance, S. Rennesson, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801154⟩

• Communication dans un congrès

Acousto-optic interaction in photonic and phononic crystals for improved efficiency

Quentin Rolland, Samuel Dupont, D. Yudistira, Joseph Gazalet, Jean-Claude Kastelik, Yan Pennec

5th International Symposium on Optronics in Defence and Security, OPTRO 2012, 2012, Paris, France. pp.Emerging Technologies II, S05_08, OPTRO-2012-095, 1-7. ⟨hal-00801112⟩

• Proceedings/Recueil des communications

Historical Reflections on the Scale Ratio in the Galilean Trattato di Fortificazione

Raffaele Pisano, Danilo Capecchi

Proceedings of Explorations in the History of Machines and Mechanisms, 15, Springer Netherlands, pp.463-473, 2012, History of Mechanism and Machine Science, 978-94-007-4132-4. ⟨10.1007/978-94-007-4132-4_32⟩. ⟨hal-04513887⟩

• Communication dans un congrès

Microstrip EBG structures for millimeter-wave range with a broadband coplanar waveguide to microstrip transition

Magdalena Chudzik, Abbas Ghaddar, Israel Arnedo, Aintzane Lujambio, Ivan Arregui, Fernando Teberio, Miguel A. G. Laso, Txema Lopetegi, Tahsin Akalin

International Symposium on Frontiers in THz Technology, FTT 2012, 2012, Nara, Japan. ⟨hal-00820993⟩

• Communication dans un congrès

Intelligent transports systems based on UWB technologies

Fouzia Boukour, Atika Rivenq

Ultra Wide Band (UWB) may offer very efficient solutions for various communication and localisation transport applications. We propose to use this technique to establish communication vehicle- to- vehicle and vehicle- to-infrastructure. In fact, compared to traditional carrier-based, Ultra-Wide…

IEEE European Wireless Conference, Sep 2012, Poland. 5p. ⟨hal-01068408⟩

• Communication dans un congrès

Throughput maximization approach for O-MIMO systems using MGDM technique

M. Awad, W. Hamouda, Iyad Dayoub

IEEE Global Communications Conference, GLOBECOM 2012, 2012, Anaheim, CA, United States. pp.2953-2958, ⟨10.1109/GLOCOM.2012.6503566⟩. ⟨hal-00820960⟩

• Communication dans un congrès

Narrow linewidth tunable THz signal generation using a unitravelling carrier photodiode and a dual-mode laser

Guillaume Ducournau, Alain Rolland, Goulc'Hen Loas, Alexandre Beck, Fabio Pavanello, Emilien Peytavit, Tahsin Akalin, Mohammed Zaknoune, Jean-Francois Lampin, Marc Brunel, François Bondu, Marc Vallet, Mehdi Alouini

A dual-frequency laser coupled to a unitravelling carrier photodiode is used to produce a highly coherent THz wave. THz signal is detected by a subharmonic mixer coupled to an electrical spectrum analyzer. All components involved in this experiment operate at room temperature and no active…

37th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2012, Sep 2012, Wollongong, Australia. pp.1-2, ⟨10.1109/IRMMW-THz.2012.6380162⟩. ⟨hal-00803095⟩

• Article dans une revue

Impact of low gamma radiation dose on electrical trap related effects in AlGaN/GaN HEMTs

F. Berthet, Y. Guhel, B. Boudart, H. Gualous, J.L. Trolet, M. Piccione, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1078-1079. ⟨10.1049/el.2012.1966⟩. ⟨hal-00788173⟩

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or…

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩