Publications

Affichage de 2121 à 2130 sur 16553


  • Article dans une revue

Editorial: Focus on organic materials, bio-interfacing and processing in neuromorphic computing and artificial sensory applications

Yoeri van de Burgt, Francesca Santoro, Benjamin Tee, Fabien Alibart

Neuromorphic Computing and Engineering, 2023, 3 (4), pp.040202. ⟨10.1088/2634-4386/ad06ca⟩. ⟨hal-04348640⟩

  • Article dans une revue

Millimetric waves communications for Railways

Marion Berbineau, Nicholas Attwood, François Gallée, Patrice Pajusco, Qianrui Li, Hervé Bonneville, Semah Mabrouki, Iyad Dayoub, D. Seetharamdoo

Transportation Research Procedia, 2023, 72, pp.1248-1255. ⟨10.1016/j.trpro.2023.11.584⟩. ⟨hal-04434496⟩

  • Chapitre d'ouvrage

Chapter 9 - Modeling of power ultrasonic transducers

Bertrand Dubus, Charles Croënne, Pascal Mosbah

Ultrasonic systems are usually comprised of three elements: a generator providing the electrical energy, an electromechanical transducer converting electrical energy into mechanical vibratory energy, and a propagation medium, fluid or solid, in which acoustic energy is radiated. These devices…

EDS Juan A. Gallego-Juárez; Karl F. Graff; Margaret Lucas. Power Ultrasonics (Second Edition) Applications of High-Intensity Ultrasound, Woodhead Publishing Series in Electronic and Optical Materials, Elsevier, pp.147-159, 2023, ISBN 978-0-12-820254-8. ⟨10.1016/B978-0-12-820254-8.00034-8⟩. ⟨hal-04132344⟩

  • Article dans une revue

Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices

Thomas Bordignon, Blandine Duriez, Nicolas Guitard, Romain Duru, Clément Pribat, Jérôme Richy, Shay Reboh, Siddhartha Dhar, Frédéric Monsieur, Thibaud Fache, Zdenek Chalupa, Jean-Michel Hartmann, Pascal Chevalier, Yannick Roelens, Francois Danneville, Sébastien Crémer

A new method to induce tensile stress in a PDSOI NMOS device for RF applications is proposed, which is based on relaxing a SiGe layer built underneath silicon. By means of TCAD simulations, we demonstrate that stress transfer from SiGe to Si occurs by means of at least two different mechanisms:…

Solid-State Electronics, 2023, 210, pp.108787. ⟨10.1016/j.sse.2023.108787⟩. ⟨hal-04253696⟩