Publications

• Article dans une revue

Reactive ion beam etching of PZT thin films

Caroline Soyer, Eric Cattan, Denis Remiens

Lead titano-zirconate ferroelectric thin films have developed a great interest for their applications in memory devices, and more recently in microelectromechanical systems because of their interesting piezoelectric properties. The patterning has become an essential element for PZT integration in…

Ferroelectrics, 2003, 288 (1), pp.253-263. ⟨10.1080/00150190390211530⟩. ⟨hal-00146478⟩

• Article dans une revue

A new empirical nonlinear model for sub-250 nm channel MOSFET

Alexandre Siligaris, Gilles Dambrine, Dominique Schreurs, Francois Danneville

An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge…

IEEE Microwave and Wireless Components Letters, 2003, 13 (10), pp.449-451. ⟨10.1109/LMWC.2003.815687⟩. ⟨hal-00145981⟩

• Article dans une revue

Micromachined 2D nanoelectrospray emitter

S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando

A novel 2D nanoelectrospray emitter for mass spectrometry has been micromachined using photoresist SU-8 on silicon substrates using one-step photomasking. The design contains a reservoir, a capillary slot and an emitter tip. The emitters were successfully tested on an ion trap mass spectrometer. A…

Electronics Letters, 2003, 39 (24), pp.1702. ⟨10.1049/el:20031099⟩. ⟨hal-02347842⟩

• Communication dans un congrès

Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

E. Lefebvre, M. Zaknoune, Y. Cordier, F. Mollot

2003, pp.409-412. ⟨hal-00162725⟩

• Communication dans un congrès

Improvement of conductivity and breakdown characteristics of AlGaN/GaN HEMT structures in passivation experiments

S. Shapoval, V. Gurtovoi, A. Kovalchuk, L. Eastman, A. Vertjachih, Christophe Gaquière, D. Theron

2003, pp.90-93. ⟨hal-00149939⟩

• Article dans une revue

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

E. Lampin, Fuccio Cristiano, Y. Lamrani, Alain Claverie, B. Colombeau, N.E.B. Cowern

The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method…

Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩. ⟨hal-00146393⟩

• Communication dans un congrès

Self-assembled molecular rectifying diodes

S. Lenfant, D. Vuillaume, Christophe Krzeminski, C. Delerue

Materials Research Society Spring Meeting, 2003, San Francisco, CA, United States. ⟨hal-00146173⟩

• Communication dans un congrès

Experimental and theoretical charge transport studies in self-assembled molecular rectifying diodes on silicon

Christophe Delerue, Stéphane Lenfant, Christophe Krzeminski, Guy Allan, Dominique Vuillaume

French-USA Conference on Molecular-scale Electronics, 2003, Paris, France. ⟨hal-00146177⟩

• Communication dans un congrès

High uniformity and high quality P-based heterostructures grown by a production MBE system for optoelectronics applications

A. Wilk, S. Godey, P. Gerard, C. Chaix, F. Mollot

2003, pp.421-424. ⟨hal-00162724⟩

• Article dans une revue

Strong effect of interband transitions in the picosecond ultrasonics response of metallic thin films

Arnaud Devos, A. Le Louarn

We report on the strong laser wavelength effects in the shape of acoustical pulses generated and detected in thin metallic films using ultrashort optical pulses. The experiments have been performed on aluminum and copper. In both cases, we have observed a sign change of the acoustical part in the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.045405/1-6. ⟨10.1103/PhysRevB.68.045405⟩. ⟨hal-00144884⟩