Publications
Affichage de 14861 à 14870 sur 16462
0.12µm gate length In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate
S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar, J. Mateos
2002, pp.101-105. ⟨hal-00152950⟩
Experimental study of hot-electron inelastic scattering rate in p-type InGaAs
D. Sicault, R. Teissier, F. Pardo, J.L. Pelouard, F. Mollot
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, 12, pp.121301. ⟨hal-00018482⟩
Statics and dynamics in giant magnetostrictive TbxFe1-xFe0.6Co0.4 multilayers for MEMS
Jamal Ben Youssef, Nicolas Tiercelin, Fabienne Petit, Henri Le Gall, Vladimir Preobrazhensky, Philippe Pernod
IEEE Transactions on Magnetics, 2002, 38, pp.2817-2819. ⟨hal-00148689⟩
Rectifying molecular diodes from self-assembly on silicon
S. Lenfant, Christophe Krzeminski, C. Delerue, D. Vuillaume
Electronic Materials Conference, 2002, Santa Barbara, CA, United States. ⟨hal-00148725⟩
Current rectification from sigma-pi self-assembled monolayers on silicon
S. Lenfant, Christophe Krzeminski, C. Delerue, D. Vuillaume
5th International Conference on Functionalized n-electron Systems, 2002, Ulm, Germany. ⟨hal-00148709⟩
Conception et réalisation d'un séparateur acousto-optique de polarisation
A. Sakkour
2002. ⟨hal-00162705⟩
From nanoelectronics to nanotechnology
Emmanuel Dubois
Belgian Journal of Electronics & Communications HF, 2002, 3, pp.9-16. ⟨hal-00250387⟩
On the physical interest of some numerical methods for wave phase conjugation in active media
A. Merlen, Vladimir Preobrazhensky, Philippe Pernod
2002, pp.208. ⟨hal-00148692⟩
High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz
N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs
2002, 4 pp. ⟨hal-00149700⟩