Publications

• Communication dans un congrès

When Solid State Chemistry meets Micro-electronics: New 3D micro-batteries

Pascal Roussel, Thierry Brousse, Christophe Lethien

Séminaire au laboratoire CRISMAT, 2022, Caen, France. ⟨hal-04303219⟩

• Article dans une revue

Redox-controlled conductance of polyoxometalate molecular junctions

Cécile Huez, David Guérin, Stéphane Lenfant, Florence Volatron, Michel Calame, Mickael Perrin, Anna Proust, Dominique Vuillaume

We demonstrate the reversible in situ photoreduction of molecular junctions of phosphomolybdate [PMo12O40]3- monolayer self-assembled on flat gold electrodes, connected by the tip of a conductive atomic force microscope. The conductance of the one electron reduced [PMo12O40]4- molecular junction is…

Nanoscale, 2022, 14 (37), pp.13790-13800. ⟨10.1039/d2nr03457c⟩. ⟨hal-03779937⟩

• Article dans une revue

Transport Properties of Methyl-Terminated Germanane Microcrystallites

Davide Sciacca, Maxime Berthe, Bradley Ryan, Nemanja Peric, D. Deresmes, Louis Biadala, Christophe Boyaval, Ahmed Addad, Ophélie Lancry, Raghda Makarem, Sébastien Legendre, Didier Hocrelle, Matthew Panthani, Geoffroy Prévot, Emmanuel Lhuillier, Pascale Diener, B. Grandidier

Germanane is a two-dimensional material consisting of stacks of atomically thin germanium sheets. It’s easy and low-cost synthesis holds promise for the development of atomic-scale devices. However, to become an electronic-grade material, high-quality layered crystals with good chemical purity and…

Nanomaterials, 2022, 12 (7), pp.1128. ⟨10.3390/nano12071128⟩. ⟨hal-03634314⟩

• Article dans une revue

Elaboration and characterization of porous ultrathin gold films grown by ion beam assisted deposition

Abdelhanin Aassime, Marc Duquennoy, Frédéric Hamouda, Tahar Kadi, Frédéric Mahut, Mohammadi Ouaftouh

The growth of ultrathin gold layers on a silicon substrate is performed with an unconventional ion beam assisted deposition. In this setup, evaporated gold flow and ion beam flux are perpendicular. 5 and 10 nm thick gold were deposited on tilted samples with the assistance of an argon ion beam at…

Journal of Vacuum Science & Technology A, 2022, 40 (5), pp.053404. ⟨10.1116/6.0002050⟩. ⟨hal-03769982⟩

• Article dans une revue

Modeling of access resistances and channel temperature estimation for GaN HEMT

Shariful Islam, Mohammad Abdul Alim, Abu Zahed Chowdhury, Christophe Gaquière

Accurate prediction of resistances at the transistor’s access zone and their temperature dependency are very important, since the current flow to the device depends on that region. In this paper, we have modeled the access resistances and have verified their temperature dependency with the…

Journal of Thermal Analysis and Calorimetry, 2022, 147, pp.10991-10998. ⟨10.1007/s10973-022-11371-y⟩. ⟨hal-03670320⟩

• Article dans une revue

Towards Outdoor Electromagnetic Field Exposure Mapping Generation Using Conditional GANs

Mohammed Mallik, Angesom Ataklity Tesfay, Benjamin Allaert, Rédha Kassi, Esteban Egea-Lopez, Jose-Maria Molina-Garcia-Pardo, Joe Wiart, Davy Gaillot, Laurent Clavier

With the ongoing fifth-generation cellular network (5G) deployment, electromagnetic field exposure has become a critical concern. However, measurements are scarce, and accurate electromagnetic field reconstruction in a geographic region remains challenging. This work proposes a conditional…

Sensors, 2022, 22 (24), pp.9643. ⟨10.3390/s22249643⟩. ⟨hal-03919067⟩

• Article dans une revue

Embroidered Spoof Surface Plasmon Polariton Transmission Line for Wireless Body Sensor Network

Ali Ghaddar, Baptiste Garnier, François Rault, Eric Lheurette, Ludovic Burgnies

A wearable Spoof Surface Plasmon Polariton Transmission Line (SSPP TL) operating at 2.45 GHz designed for embroidery production and on-body communication is proposed. The SSPP TL supports both even and odd modes launched by near field coupling with a dipole antenna perpendicular and parallel to the…

IET Microwaves Antennas and Propagation, 2022, 16 (4), pp.187-193. ⟨10.1049/mia2.12224⟩. ⟨hal-03592149⟩

• Article dans une revue

Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

Caroline Maye, Sylvie Lepilliet, Etienne Okada, Marc Margalef-Rovira, Issa Alaji, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière

This article aims to discuss challenges and performances of a passive load-pull test bench dedicated to the G-band frequencies. The first task of this work is the development of the setup to perform high power generation, impedance generation, and high-power dynamic of measurement. The solution…

IEEE Transactions on Microwave Theory and Techniques, 2022, 70 (1), pp 444-452. ⟨10.1109/TMTT.2021.3111170⟩. ⟨hal-03507882⟩

• Article dans une revue

Review on Unmanned Aerial Vehicle Assisted Sensor Node Localization in Wireless Networks: Soft Computing Approaches

Visalakshi Annepu, Deepika Rani Sona, Chinthaginjala Ravikumar, Kalapraveen Bagadi, Mohammad Alibakhshikenari, Ayman Althuwayb, Bader Alali, Bal Virdee, Giovanni Pau, Iyad Dayoub, Chan Hwang See, Francisco Falcone

Node positioning or localization is a critical requisite for numerous position-based applications of wireless sensor network (WSN). Localization using the unmanned aerial vehicle (UAV) is preferred over localization using fixed terrestrial anchor node (FTAN) because of low implementation complexity…

IEEE Access, 2022, 10, pp.132875-132894. ⟨10.1109/ACCESS.2022.3230661⟩. ⟨hal-03940270⟩

• Article dans une revue

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than…

Micromachines, 2022, III–V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩. ⟨hal-03777891⟩