Publications

• Article dans une revue

A robust thermal microstructure for mass flow rate measurement in steady and unsteady flows

R. Viard, Abdelkrim Talbi, A. Merlen, Philippe Pernod, C. Frankiewicz, J.C. Gerbedoen, Vladimir Preobrazhensky

Journal of Micromechanics and Microengineering, 2013, 23, pp.065016-1-8. ⟨10.1088/0960-1317/23/6/065016⟩. ⟨hal-00821233⟩

• Article dans une revue

Dynamic sensing of magnetic nanoparticles in microchannel using GMI technology

Kamel Fodil, Matthieu Denoual, Christophe Dolabdjian, M. Harnois, V. Senez

This paper presents the detection of magnetic nanoparticles flowing into a microchannel using giant magnetic impedance (GMI) microwire sensor made up of CoFeSiBNb alloy (40 diameter and 1 cm long wire). Detection tests were performed using UltraSmall Particles of Iron Oxyde (USPIO) with diameter of…

IEEE Transactions on Magnetics, 2013, pp.49(1), 124-127. ⟨hal-00980710⟩

• Article dans une revue

In situ high-temperature characterization of AlN-based surface acoustic wave devices

T. Aubert, Jochen Bardong, Ouarda Legrani, O. Elmazria, M. Badreddine Assouar, Gudrun Bruckner, Abdelkrim Talbi

We report on in situ electrical measurements of surface acoustic wave delay lines based on AlN/sapphire structure and iridium interdigital transducers between 20 °C and 1050 °C under vacuum conditions. The devices show a great potential for temperature sensing applications. Burnout is only observed…

Journal of Applied Physics, 2013, 114 (1), pp.014505. ⟨10.1063/1.4812565⟩. ⟨hal-00871910⟩

• Communication dans un congrès

Sheet resistance of multi-layer stacking of silicene

Pierre Capiod, Maxime Berthe, Andrea Resta, Paola de Padova, Patrick Vogt, Guy Le Lay, B. Grandidier

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium I - The route to post-Si CMOS devices : from high mobility channels to graphene-like 2D nanosheets, 2013, Strasbourg, France. ⟨hal-00819685⟩

• Communication dans un congrès

Geometry optimization for sub-THz Gunn emission : a V-shape GaN nanodevice

I. Iniguez-De-La-Torre, J.F. Millithaler, A. Iniguez-De-La-Torre, J. Mateos, P. Sangare, Guillaume Ducournau, Christophe Gaquière, T. Gonzales

18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, EDISON18, 2013, Matsue, Japan. ⟨hal-00823433⟩

• Article dans une revue

Establishment of a derivatization method to quantify thiol function in sulfur-containing plasma polymer films

D. Thiry, R. Francq, D. Cossement, David Guérin, D. Vuillaume, R. Snyders

Langmuir, 2013, 29, pp.13183-13189. ⟨10.1021/la402891t⟩. ⟨hal-00903758⟩

• Autre publication scientifique

Contribution à la conception optimale de microsystèmes en silicium à actionnement électrostatique. Synthèse automatique, réalisation et caractérisation d'une micropince à haute résolution de force

Aymen Grira

2013. ⟨hal-00827398⟩

• Communication dans un congrès

Conducting IPNs based self-standing and ultrathin microactuators operating in air

Ali Maziz, Cedric Plesse, C. Chevrot, D. Teyssie, Caroline Soyer, Eric Cattan, F. Vidal

7th World Congress on Biomimetics, Artificial Muscles and Nano-Bio, BAMN 2013, 2013, Jeju Island, South Korea. ⟨hal-00908687⟩

• Communication dans un congrès

Nanoscale capacitors study with an interferometric scanning microwave microscope

Fei Wang, Nicolas Clément, David Troadec, Bernard Legrand, Gilles Dambrine, Didier Theron

Electrical impedance characterization at the nanoscale is a challenge for beyond CMOS investigations and for understanding the electronic properties of nanomaterials. Among the various scanning probe microscopes, Scanning Microwave Microscope (SMM) is of particular interest because it combines…

Materials Research Society Fall Meeting, MRS Fall 2013, Symposium LL : Advances in Scanning Probe Microscopy, 2013, Boston, MA, United States. ⟨hal-00944017⟩

• Communication dans un congrès

E-beam fabricated GaN Schottky diodes : high-frequency and non-linear properties

C. Jin, M. Zaknoune, D. Ducatteau, D. Pavlidis

E-Beam processed GaN-based Schottky diodes for microwave, millimeter-wave power applications were characterized under both small-signal and large-signal conditions. A Large-Signal Network Analyzer was used and equivalent circuit models were obtained by combining small signal S-parameter data with…

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper TH3H-5, 4 p., ⟨10.1109/MWSYM.2013.6697734⟩. ⟨hal-00944029⟩