Publications

Affichage de 10021 à 10030 sur 16558


  • Article dans une revue

Alpha-stable multiple access interference modelling for amplify-and-forward multihop ad hoc networks

Jie Chen, Laurent Clavier, N. Rolland, P.A. Rolland

Electronics Letters, 2010, 46, pp.1160-1162. ⟨10.1049/el.2010.1465⟩. ⟨hal-00548624⟩

  • Article dans une revue

Picosecond carrier lifetime in low-temperature-grown GaAsSb

X. Wallart, Christophe Coinon, S.R. Plissard, S. Godey, Olivier Offranc, Ydir Androussi, Vincent Magnin, Jean-Francois Lampin

We study the influence of growth parameters on the properties of low-temperature-grown GaAsSb layers with 15–20% Sb. We demonstrate that a proper choice of growth conditions allows achieving monocrystalline as-grown layers exhibiting carrier lifetime around 1 ps and a resistivity higher than 1 kΩ·…

Japanese Journal of Applied Physics, part 2 : Letters, 2010, 3, pp.111202-1-3. ⟨10.1143/APEX.3.111202⟩. ⟨hal-00548732⟩

  • Article dans une revue

Calcium wave propagation in chains of endothelial cells with nonlinear reaction dynamics: Green's function approach

P.A. Deymier, K. Runge, M.J. Deymier, J.B. Hoying, Jerome O. Vasseur

Physical Review E : Statistical, Nonlinear, and Soft Matter Physics [2001-2015], 2010, 82, pp.041913-1-13. ⟨10.1103/PhysRevE.82.041913⟩. ⟨hal-00549050⟩

  • Article dans une revue

Graphene on metallic substrates : suppression of the Kohn anomalies in the phonon dispersion

A. Allard, L. Wirtz

Nano Letters, 2010, 10, pp.4335-4340. ⟨10.1021/nl101657v⟩. ⟨hal-00549079⟩

  • Article dans une revue

Development of a new generation of active AFM tools for applications in liquids

A.S. Rollier, D.F.L. Jenkins, El Hadj Dogheche, Bernard Legrand, M. Faucher, L. Buchaillot

Journal of Micromechanics and Microengineering, 2010, 20, pp.085010-1-11. ⟨10.1088/0960-1317/20/8/085010⟩. ⟨hal-00548990⟩

  • Article dans une revue

Perfectly (001)- and (111)-oriented (Ba,Sr)TiO3 thin films sputtered on Pt/TiOx/SiO2/Si without buffer layers

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.350-352. ⟨10.1111/j.1551-2916.2009.03427.x⟩. ⟨hal-00549519⟩

  • Article dans une revue

LP MOCVD growth of InAlN/GaN HEMT heterostructure : comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

M.A. Di Forte-Poisson, N. Sarazin, M. Magis, M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. Georgakilas, P. Kominou, M. Guziewicz, E. Kaminska, A. Piotrowska, Christophe Gaquière, M. Oualli, E. Chartier, E. Morvan, S. Delage

Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7, pp.1317-1324. ⟨10.1002/pssc.200983114⟩. ⟨hal-00549909⟩