Publications

Affichage de 10031 à 10040 sur 16120


  • Communication dans un congrès

High frequency performance of tellurium δ-doped AlSb/InAs HEMTs at low power supply

A. Olivier, A. Noudeviwa, Nicolas Wichmann, Yannick Roelens, L. Desplanque, Francois Danneville, Gilles Dambrine, X. Wallart, S. Bollaert

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.162-165. ⟨hal-00549918⟩

  • Article dans une revue

Study of Ni2-Mn-Ga phase formation by magnetron sputtering film deposition at low temperature onto Si substrates and LaNiO3/Pb(Ti,Zr)O3 buffer

F. Figueiras, E. Rauwel, V.S. Amaral, N. Vyshatko, A.L. Kholkin, Caroline Soyer, Denis Remiens, V.V. Shvartsman, P. Borisov, W. Kleemann

Journal of Vacuum Science & Technology A, 2010, 28, pp.6-10. ⟨10.1116/1.3256200⟩. ⟨hal-00549531⟩

  • Communication dans un congrès

Control strategies and performance of a magnetically actuated tactile micro-actuator array

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

EuroHaptics International Conference on Generating and Perceiving Tangible Sensations, EuroHaptics 2010, 2010, France. pp.385-391, ⟨10.1007/978-3-642-14075-4_57⟩. ⟨hal-00549964⟩

  • Communication dans un congrès

Atomic scale dopant metrology in an individual silicon nanowire by atom probe tomography

W.H. Chen, Rodrigue Lardé, Emmanuel Cadel, T. Xu, J.P. Nys, B. Grandidier, D. Stiévenard, Philippe Pareige

In this work, the p-type silicon nanowires (SiNWs) are grown by the Chemical Vapor Deposition (CVD) method using gold as catalyst droplet, silane as precursor and diborane as dopant reactant and are analyzed at the atomic scale using the three dimensional laser assisted Atom Probe Tomography (APT…

Nanotechnology 2010 Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Jun 2010, Anaheim, CA, United States. pp.29-32. ⟨hal-01953261⟩

  • Communication dans un congrès

Vacuum UV emission spectroscopy of discharge excited by a RF helical coupling device in N2-Ar mixtures

P. Veis, C. Foissac, A. Annusova, J. Kristof, V. Martisovits, P. Supiot

63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas, 2010, Paris, France. pp.DTP-125, 1-2. ⟨hal-00579032⟩

  • Communication dans un congrès

Design of waveguides in silicon phoxonic crystal slabs

Vincent Laude, J. C. Beugnot, Sarah Benchabane, Yan Pennec, Bahram Djafari-Rouhani, N. Papanikolaou, Alejandro Martinez

We consider the problem of designing waveguides in nanostructures presenting simultaneously phononic and photonic band gaps. We specifically opt for designs in perforated silicon membranes that can be conveniently obtained using silicon-on- insulator technology. Geometrical parameters for…

IEEE International Ultrasonics Symposium, Oct 2010, San Diego, CA, United States. pp.527-530, ⟨10.1109/ULTSYM.2010.5935703⟩. ⟨hal-00541910⟩