Publications
Affichage de 10631 à 10640 sur 16294
Study of ohmic contact formation on AlGaN/GaN HEMT with AlN spacer on silicon substrate
J. Gerbedoen, A. Soltani, M. Mattalah, A. Telia, D. Traodec, B. Abdallah, E. Gautron, Jean-Claude de Jaeger
4th European Microwave Integrated Circuits Conference, EuMIC 2009, 2009, Italy. pp.136-139. ⟨hal-00474491⟩
Analysis of size effects in Pb(Zr0.54Ti0.46)O3 thin film capacitors with platinum and LaNiO3 conducting oxide electrodes
R. Bouregba, N. Sama, Caroline Soyer, Denis Remiens
Journal of Applied Physics, 2009, 106 (4), pp.044101. ⟨10.1063/1.3200956⟩. ⟨hal-00473708⟩
AlGaN/GaN HEMT high power densities on SiC/SiO2/poly-SiC substrates
N. Defrance, Virginie Hoel, Y. Douvry, Jean-Claude de Jaeger, Christophe Gaquière, Xing Tang, Michel Rousseau, M.A. Di Forte-Poisson, J. Thorpe, H. Lahreche, R. Langer
IEEE Electron Device Letters, 2009, 30, pp.596-598. ⟨10.1109/LED.2009.2019972⟩. ⟨hal-00473428⟩
Complex permittivity and tunable performance of BST thin film up to 60 GHz
Jean-François Legier, T. Lasri, Erick Paleczny, Denis Remiens, Caroline Soyer, Freddy Ponchel, J. Midy, G. Guegan
Sino-French Workshop, 2009, Shanghai, China. ⟨hal-00575713⟩
Growth and electrical properties of MPB BiScO3-PbTiO3 thin films
S. Zhang, X. Dong, Y. Zhang, F. Cao, Gang Wang, N. Sama, Denis Remiens
Sino-French Workshop, 2009, Shanghai, China. ⟨hal-00575746⟩
Non-destructive characterization of ceramic aeronautic bearing balls using resonant ultrasound spectroscopy
F. Deneuville, Mohammadi Ouaftouh, Marc Duquennoy, Frédéric Jenot, Mohamed Ourak, S. Desvaux
International Symposium on Technological Innovation & Transport Systems, ITT'09, 2009, Paris, France. ⟨hal-00575754⟩
Optical properties of gallium nitride epitaxial layers deposited on a novel low temperature buffer layer - Application to waveguide applications
A. Stolz, E. Cho, El Hadj Dogheche, D. Pavlidis, Didier Decoster
28èmes Journées Nationales d'Optique Guidée, OPTIQUE Lille 2009, 2009, Villeneuve d'Ascq, France. ⟨hal-00575297⟩
Carbon and nanowires based devices for high frequencey and low power applications
H. Happy, L. Nougaret, N. Meng, Gilles Dambrine, S. Bollaert, D. Hourlier, P. Caroff, D. Vignaud
Sino-French Workshop, 2009, Shanghai, China. ⟨hal-00574847⟩
Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires
J. Johansson, P. Caroff, K.A. Dick, M.E. Messing, J. Bolinsson, K. Deppert, L. Samuelson
Materials Research Society Fall Meeting, MRS Fall 2009, 2009, Boston, MA, United States. ⟨hal-00574854⟩
Individual 1D nano-object characterizations in GHz range using in-situ high impedance measurement set-up
L. Nougaret, M. Marczak, D. Hourlier-Bahloul, Vincent Derycke, H. Happy, Gilles Dambrine
Tenth International Conference on the Science and Application of Nanotubes, NT09, 2009, Beijing, China. ⟨hal-00574839⟩