Publications

• Article dans une revue

Gate-recess technology for InAs/AlSb HEMTs

E. Lefebvre, M. Malmkvist, M. Borg, L. Desplanque, X. Wallart, Gilles Dambrine, S. Bollaert, J. Grahn

IEEE Transactions on Electron Devices, 2009, 56, pp.1904-1911. ⟨10.1109/TED.2009.2026123⟩. ⟨hal-00471908⟩

• Article dans une revue

Improved characterization methology for MOSFETs up to 220 GHz

N. Waldhoff, C. Andrei, D. Gloria, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine

IEEE Transactions on Microwave Theory and Techniques, 2009, 57, pp.1237-1243. ⟨10.1109/TMTT.2009.2017359⟩. ⟨hal-00471808⟩

• Article dans une revue

Recent progress in high-speed silicon-based optical modulators [Invited paper]

D. Marris-Morini, L. Vivien, G. Rasigade, J.M. Fedeli, E. Cassan, Xavier Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, Mathieu Halbwax, S. Laval

Proceedings of the IEEE, 2009, 97, pp.1199-1215. ⟨10.1109/JPROC.2009.2015337⟩. ⟨hal-00473046⟩

• Article dans une revue

Nanoscale plasmon waveguide including cavity resonator

A. Noual, Yan Pennec, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski

Journal of Physics: Condensed Matter, 2009, 21, pp.375301-1-6. ⟨10.1088/0953-8984/21/37/375301⟩. ⟨hal-00473342⟩

• Article dans une revue

Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

V.G. Dubrovskii, N.V. Sibirev, G.E. Cirlin, I.P. Soshnikov, W.H. Chen, R. Larde, E. Cadel, P. Pareige, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, M. Moewe, L.C. Chuang, C. Chang-Hasnain

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.205316-1-7. ⟨10.1103/PhysRevB.79.205316⟩. ⟨hal-00473095⟩

• Article dans une revue

Towards silicon-nanowire-structured materials by the intimate mixing of patterning the solid state and chemical reactions

D. Hourlier, Bernard Legrand, Christophe Boyaval, P. Perrot

Journal of Nano Research, 2009, 6, pp.215-224. ⟨10.4028/www.scientific.net/JNanoR.6.215⟩. ⟨hal-00471951⟩

• Article dans une revue

A 60 GHz six-port distance measurement system with sub-millimeter accuracy

Kamel Haddadi, M.M. Wang, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2009, 19, pp.644-646. ⟨10.1109/LMWC.2009.2029744⟩. ⟨hal-00472454⟩

• Article dans une revue

Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI

G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, N. Breil, Olivier Faynot

As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As$^+$) implantation.…

IEEE Electron Device Letters, 2009, 30 (12), pp.1266-1268. ⟨10.1109/LED.2009.2033085⟩. ⟨hal-00471974⟩

• Communication dans un congrès

GHz modulation of tunable THz radiation from photomixing at 1.55 µm

J. Mangeney, M. Martin, P. Crozat, Y. Chassagneux, R. Colombelli, L. Vivien, K. Blary, Jean-Francois Lampin

34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, 2009, South Korea. pp.1-2, ⟨10.1109/ICIMW.2009.5325656⟩. ⟨hal-00474510⟩

• Communication dans un congrès

High frequency modelling of power transformer application to railway substation in scale model

Hamid Ouaddi, S. Baranowski, Nadir Idir

The paper presents the first step uf an EMC (Electromagnetic Cumpatlblllty) analysis uf a railway puwer substatlun in high frequency with reduced scale mudel. The muck-up uf the substation is puwered by a 220 V three-phase vultage supplied by a 15 kVA puwer transfurmer, a rectifier and loads. The…

14th International Symposium on Electromagnetic Fields in Mechatronics, Electrical and Electronic Engineering, ISEF 2009, 2009, Arras, France. pp.CDROM, 541-542. ⟨hal-00474518⟩