Publications

Affichage de 11401 à 11410 sur 16551


  • Article dans une revue

Multiple scattering effects in strain and composition analysis of nanoislands by grazing incidence x rays

M.I. Richard, V. Favre-Nicolin, G. Renaud, T.U. Schuelli, C. Priester, Z. Zhong, T.H. Metzger

Applied Physics Letters, 2009, 94, pp.013112-1-3. ⟨10.1063/1.3064157⟩. ⟨hal-00471926⟩

  • Article dans une revue

First internal spacers' introduction in record high I-ON/I-OFF TiN/HfO2 gate multichannel MOSFET satisfying both high-performance and low standby power requirements

E. Bernard, T. Ernst, B. Guillaumot, N. Vulliet, T.C. Lim, O. Rozeau, Francois Danneville, P. Coronel, T. Skotnicki, S. Deleonibus, O. Faynot

IEEE Electron Device Letters, 2009, 30, pp.148-151. ⟨10.1109/LED.2008.2009008⟩. ⟨hal-00471806⟩

  • Article dans une revue

SU-8 photoresist and SU-8 based nanocomposites for broadband acoustical matching at 1 GHz

Assane Ndieguene, Pierre Campistron, Julien Carlier, S. Wang, Dorothée Debavelaere-Callens, Bertrand Nongaillard

So as to integrate acoustic functions in BioMEMS using 1 GHz ZnO transducers deposited on silicon substrates, acoustic waves propagation through the silicon substrate and its transmission in water needs to be maximized (the insertion losses at the Si / water interface are about 6dB). In the context…

Journal of Physics: Conference Series, 2009, 195, pp.012005-1-8. ⟨10.1088/1742-6596/195/1/012005⟩. ⟨hal-00473733⟩

  • Communication dans un congrès

An organic-nanoparticle transistor behaving as a spiking synapse

F. Alibart, Christophe Novembre, David Guérin, Stéphane Pleutin, K. Lmimouni, Christian Gamrat, Dominique Vuillaume

4th International Meeting on Molecular Electronics, ElecMol'08, Dec 2008, Grenoble, France. ⟨hal-00361614⟩

  • Article dans une revue

Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/SiO2/Si structure

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, F. Phillipp, P.A. van Aken, N. Breil, G. Larrieu, Emmanuel Dubois

The mechanisms of the platinum germanide formation by RTA processes in the Ge/Pt/Ge/SiO2/Si structure in the temperature range from 200 °C to 600 °C were investigated by means of transmission electron microscopy (TEM) techniques. The studies were focused on the observations of the layer…

Materials Science and Engineering: B, 2008, 154-155, pp.175-178. ⟨10.1016/j.mseb.2008.10.002⟩. ⟨hal-00356977⟩