Publications

• Article dans une revue

A novel micromachined 2D nanoelectrospray emitter

S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando

Electronics Letters, 2003, 39, pp.1702-1703. ⟨hal-00146381⟩

• Communication dans un congrès

Transport électronique dans les systèmes moléculaires auto-assemblés, récents développements en électronique moléculaire

D. Vuillaume

10èmes Journées des Polymères Conducteurs, 2003, Dourdan, France. ⟨hal-00146384⟩

• Article dans une revue

Path delay model based on stable distribution for the 60GHz indoor channel

N. Azzaoui, Laurent Clavier, R. Sabre

IEEE GLOBECOM, 2003, pp.441-467. ⟨hal-01077681⟩

• Communication dans un congrès

Sommation optique de signaux hyperfréquences

G. Ulliac, N. Breuil, C. Fourdin, P. Nicole, Jean-Pierre Vilcot, Didier Decoster, J. Chazelas

Club optique microonde, 2003, Villeneuve d'Ascq, France. ⟨hal-00146585⟩

• Article dans une revue

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

E. Lampin, Fuccio Cristiano, Y. Lamrani, Alain Claverie, B. Colombeau, N.E.B. Cowern

The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method…

Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩. ⟨hal-00146393⟩

• Communication dans un congrès

Physics-based diffusion simulations for preamorphized ultrashallow junctions

N.E.B. Cowern, B. Colombeau, E. Lampin, Fuccio Cristiano, Alain Claverie, Y. Lamrani, R. Duffy, V. Venezia, A. Heringa, Chen Wang, C. Zechner

2003, pp.D6.8. ⟨hal-00146407⟩

• Article dans une revue

A new empirical nonlinear model for sub-250 nm channel MOSFET

Alexandre Siligaris, Gilles Dambrine, Dominique Schreurs, Francois Danneville

An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge…

IEEE Microwave and Wireless Components Letters, 2003, 13 (10), pp.449-451. ⟨10.1109/LMWC.2003.815687⟩. ⟨hal-00145981⟩

• Autre publication scientifique

Conception d'un système de communication ultra large bande appliqué aux transports

F. El Bahhar

2003. ⟨hal-00162742⟩

• Article dans une revue

Strong effect of interband transitions in the picosecond ultrasonics response of metallic thin films

Arnaud Devos, A. Le Louarn

We report on the strong laser wavelength effects in the shape of acoustical pulses generated and detected in thin metallic films using ultrashort optical pulses. The experiments have been performed on aluminum and copper. In both cases, we have observed a sign change of the acoustical part in the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.045405/1-6. ⟨10.1103/PhysRevB.68.045405⟩. ⟨hal-00144884⟩

• Communication dans un congrès

ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements

D. Schreurs, J. Verspecht, E. Vandamme, N. Vellas, Christophe Gaquière, Marie Germain, G. Borghs

2003, pp.447-450. ⟨hal-00162739⟩