Publications

• Communication dans un congrès

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron…

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩

• Communication dans un congrès

Low frequency noise and transport mechanisms in AlGaN/GaN HEMT devices

Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Abdelali Rennane, Laurent Bary, Robert Plana, Jean-Claude de Jaeger, Marie Germain, S. Delage, Jacques Graffeuil

European Microwave Week, 2004, Amsterdam, Netherlands. ⟨hal-00141963⟩

• Communication dans un congrès

Systems conception and adaptative calibration technique for S-parameters measurement at 35 GHz

Kamel Haddadi, M. Maazi, D. Glay, T. Lasri

2004, pp.Session 4A. ⟨hal-00142280⟩

• Communication dans un congrès

Novel 2D interfaces for nanoelectrospray mass spectrometry

S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando

2004, pp.316-319. ⟨hal-00140770⟩

• Article dans une revue

Electrical and morphological properties of PP and PET conductive polymer fibers

B. Kim, V. Koncar, E. Devaux, C. Dufour, P. Viallier

Synthetic Metals, 2004, 146, pp.167-174. ⟨hal-00140736⟩

• Article dans une revue

Metal/organic/metal bistable memory devices

D. Tondelier, K. Lmimouni, D. Vuillaume, C. Fery, G. Haas

Applied Physics Letters, 2004, 85, pp.5763-5765. ⟨hal-00140747⟩

• Communication dans un congrès

Recent french results in molecular-scale electronics

D. Vuillaume

French-Russian Conference on Nanosciences and Nanotechnology, 2004, Moscou, Russia. ⟨hal-00140756⟩

• Communication dans un congrès

Structural and optical characterization of InSb-doped Si02 thin films

B. Capoen, V.L. Quang, S. Turrell, Jean-Pierre Vilcot, F. Beclin, Y. Jestin, M. Bouazaoui

5th Symposium on SiO2, Advanced Dielectrics and Related Devices, 2004, Chamonix, France. ⟨hal-00141206⟩

• Article dans une revue

Electric force microscopy of individually charged semiconductor nanoparticles on conductive substrates : an analytical model for quantitative charge imaging

Thierry Melin, H. Diesinger, D. Deresmes, D. Stievenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69, pp.035321/1-8. ⟨hal-00141248⟩

• Communication dans un congrès

Unusual quantum confinement in IV-VI materials

Guy Allan, Christophe Delerue

The effect of quantum confinement in PbSe quantum wells and dots is studied using tight binding calculations. Compared to zinc-blende semiconductors, unusual physical properties are predicted for rock salt PbSe nanostructures. The energy gap increases as the inverse of the size both for wells and…

European Materials Research Society Spring Meeting, May 2004, Strasbourg, France. ⟨10.1016/j.msec.2005.06.026⟩. ⟨hal-00141286⟩