Publications

• Communication dans un congrès

Transport électronique dans les systèmes moléculaires auto-assemblés, récents développements en électronique moléculaire

D. Vuillaume

10èmes Journées des Polymères Conducteurs, 2003, Dourdan, France. ⟨hal-00146384⟩

• Article dans une revue

Path delay model based on stable distribution for the 60GHz indoor channel

N. Azzaoui, Laurent Clavier, R. Sabre

IEEE GLOBECOM, 2003, pp.441-467. ⟨hal-01077681⟩

• Communication dans un congrès

Sommation optique de signaux hyperfréquences

G. Ulliac, N. Breuil, C. Fourdin, P. Nicole, Jean-Pierre Vilcot, Didier Decoster, J. Chazelas

Club optique microonde, 2003, Villeneuve d'Ascq, France. ⟨hal-00146585⟩

• Article dans une revue

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

E. Lampin, Fuccio Cristiano, Y. Lamrani, Alain Claverie, B. Colombeau, N.E.B. Cowern

The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method…

Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩. ⟨hal-00146393⟩

• Communication dans un congrès

Physics-based diffusion simulations for preamorphized ultrashallow junctions

N.E.B. Cowern, B. Colombeau, E. Lampin, Fuccio Cristiano, Alain Claverie, Y. Lamrani, R. Duffy, V. Venezia, A. Heringa, Chen Wang, C. Zechner

2003, pp.D6.8. ⟨hal-00146407⟩

• Article dans une revue

A new empirical nonlinear model for sub-250 nm channel MOSFET

Alexandre Siligaris, Gilles Dambrine, Dominique Schreurs, Francois Danneville

An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge…

IEEE Microwave and Wireless Components Letters, 2003, 13 (10), pp.449-451. ⟨10.1109/LMWC.2003.815687⟩. ⟨hal-00145981⟩

• Communication dans un congrès

Caractérisation opto-micro-ondes de commutateurs optiques, application aux mesures d'indices de réfraction

Samuel Dupont, K. Blary, Jean-Pierre Vilcot, J. Chazelas, H. Li, Didier Decoster

2003, pp.5C-7. ⟨hal-00146560⟩

• Chapitre d'ouvrage

Theory of Si nanocrystals

Guy Allan, Christophe Delerue, Michel Lannoo

The intense luminescence observed for porous silicon [1] has raised extremely interesting problems related to the possibility of using silicon in optoelectronics. One likely explanation is quantum confinement, induced by the formation of nanocrystallites. However, the experimental data reveal a…

PAVESI L., GAPONENKO S., and DAL NEGRO L. Towards the first silicon laser, Kluwer Academic Publishers, pp.243-260, 2003, 978-1-4020-1194-8. ⟨10.1007/978-94-010-0149-6_22⟩. ⟨hal-00131749⟩

• Communication dans un congrès

High frequency noise in FD SOI MOSFETs : a Monte Carlo investigation

R. Rengel, J. Mateos, D. Pardo, T. Gonzales, M.J. Martin, Gilles Dambrine, Francois Danneville, J.P. Raskin

2003, pp.379-386. ⟨hal-00145997⟩

• Article dans une revue

Damage assessment in composites by Lamb waves and wavelet coefficients

Christophe Paget, Sébastien Grondel, K. Levin, Christophe Delebarre

Smart Materials and Structures, 2003, 12, pp.393-402. ⟨hal-00147096⟩