Publications

• Article dans une revue

Wave channeling in compact multiport optical waveguide photonic crystal based devices

S. Fasquel, X. Melique, O. Vanbésien, D. Lippens

Superlattices and Microstructures, 2002, 32, pp.145-151. ⟨hal-00148644⟩

• Communication dans un congrès

GDR Nanoélectronique : tendances - perspectives

O. Vanbésien

9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, St Aygulf, France. ⟨hal-00148656⟩

• Article dans une revue

Characterisation of micromachining processes during KrF excimer laser ablation of TiNi shape memory alloy thin sheets and films

S.T. Davies, E.C. Havey, H. Jin, J.P. Hayes, M.K. Ghantasala, I. Roch, L. Buchaillot

Smart Materials and Structures, 2002, 11, pp.708-714. ⟨hal-00148762⟩

• Communication dans un congrès

Room temperature passivation of the silicon surface by chemisorption of an organic monolayer

S. Kar, D. Vuillaume

202nd ElectroChemical Society Meeting, 2002, Salt Lake City, UT, United States. ⟨hal-00148726⟩

• Article dans une revue

Adhesive forces investigation on a silicon tip by contact mode atomic force microscope

Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot

An atomic force microscope operating in contact mode is used in this letter for probing the adhesive forces at the apex of a silicon nanotip with typical radius smaller than 15 nm, fabricated using a combination of high-resolution electron beam lithography and plasma dry etching. The amplitude of…

Applied Physics Letters, 2002, 81, pp.2623-2625. ⟨10.1063/1.1508806⟩. ⟨hal-00148768⟩

• Communication dans un congrès

Influence of the hole injection layer in thienylene phenylene light emitting diodes

K. Lmimouni, M. Berliocchi, C. Dufour, D. Vuillaume, F. Tran Van, J. Grazulevicius, C. Chevrot, J.P. Lere-Porte, S. Wakim

INF Meeting, 2002, Bari, Italy. ⟨hal-00148713⟩

• Article dans une revue

Reactive ion beam etching effects on maskless PZT properties

Caroline Soyer, Eric Cattan, Denis Remiens

Ion beam etching of sputtered Pb(Zr 0.54 ,Ti 0.46 )O 3 has been performed using pure Ar gas. The etch rate and selectivity ratios between PZT and masks as a function of the process parameters (current density, acceleration voltage, gas pressure) has been investigated. We have evaluated the PZT…

Integrated Ferroelectrics, 2002, 48, pp.221-229. ⟨10.1080/10584580215465⟩. ⟨hal-00149624⟩

• Chapitre d'ouvrage

Noise modeling and measurement techniques in deep submicron SOI devices

Francois Danneville, Gilles Dambrine

Balandin A. Noise and Fluctuations Control in Electronic Devices, American Scientific Publishers, pp.355-365, 2002. ⟨hal-00577023⟩

• Chapitre d'ouvrage

Growth of PbTiO3/Pb[Zr,Ti]O-3 heterostructures by sputtering on Si substrate : influence of a buffer layer on the structural and electrical properties of Pb[Zr,Ti]O-3

Denis Remiens

Pandalai S.G. Crystal growth in thin solid films - Control of epitaxy, Research Signpost, Kerala, India, pp.71-86, 2002. ⟨hal-00577027⟩

• Communication dans un congrès

0.12µm gate length In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar, J. Mateos

2002, pp.101-105. ⟨hal-00152950⟩