Publications

• Communication dans un congrès

Deep traps related effects in GaN MESFET's grown on saphire substrate

A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159037⟩

• Communication dans un congrès

Dry etching for gate recessing on AlGaN/GaN HEMTs

Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159034⟩

• Communication dans un congrès

GaN MESFETs for power and high temperature applications

B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, François Huet, M.A. Poisson, I. Daumiller, E. Kohn

NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. ⟨hal-00159032⟩

• Article dans une revue

Raman characterization of GaN synthetised by N implantation in GaAs substrate

B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt

Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩

• Article dans une revue

Vector and parallel implementations for the FDTD analysis of millimeter wave planar antennas

H. Hoteit, Ronan Sauleau, B. Philippe, Philippe Coquet, J.P. Daniel

International Journal of High Speed Computing, 1999, 10 (2), 209-234 - 25 p. ⟨hal-00557655⟩

• Communication dans un congrès

Nano-lithography by SPM-induced oxidation: role of space charge in the kinetics of oxide growth

Emmanuel Dubois, Jean-Luc Bubendorff

Proc. of the International Semiconductor Device Research Symposium ISDRS’99, Dec 1999, Charlottesville, United States. ⟨hal-04249195⟩

• Article dans une revue

Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

J.-L Farvacque, Z. Bougrioua, I Moerman, G. van Tendeloo, O. Lebedev

Physica B: Condensed Matter, 1999, 273-274, pp.140-143. ⟨10.1016/S0921-4526(99)00431-7⟩. ⟨hal-02906481⟩

• Article dans une revue

Uniformity improvement of linear power pHEMTs using a very high selective wet etching

X. Hue, B. Boudart, B. Bonte, Y. Crosnier

The realization and characterization of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs multifinger linear power pHEMTs, using a citric acid selective wet etching for the gate recessing, are reported. A very high uniformity for both the drain current and pinch-off voltage values have been obtained. The…

Microwave and Optical Technology Letters, 1999, 23 (3), pp.192 - 194. ⟨10.1002/(SICI)1098-2760(19991105)23:33.0.CO;2-5⟩. ⟨hal-01646851⟩

• Communication dans un congrès

Transducteurs optomillimétriques en filière InP pour réseaux locaux courte portée interfacés au réseau fibre optique

J. Barrette, Christophe Dalle, Didier Decoster, Manuel Fendler, Marie-Renée Friscourt, Jean-Philippe Gouy, Joseph Harari, Vincent Magnin, Francis Mollot, Paul-Alain Rolland, Jean-Pierre Vilcot

Bilan du programme CNRS-TELECOM, Nov 1999, Paris, France. ⟨hal-04457984⟩

• Article dans une revue

Mobility Collapse in Undoped and Si‐Doped GaN Grown by LP‐MOVPE

Zahia Bougrioua, J.-L Farvacque, Ingrid Moerman, Piet Demeester, J.J. Harris, K Lee, Gustaaf van Tendeloo, Oleg Lebedev, E. J. Thrush

physica status solidi (b), 1999. ⟨hal-02906475⟩