Publications
Affichage de 16241 à 16250 sur 16553
Applications hyperfréquences et optoélectroniques des transistors à effet de champ à transfert électronique
F. Driouch, M.R. Friscourt, Christophe Dalle
10èmes Journées Nationales Microondes, 1997, Saint-Malo, France. ⟨hal-00005307⟩
Realization of viaholes for InP millimeter wave devices by wet chemical etching using bromine/methanol
S. Trassaert, B. Boudart, Stephane Piotrowicz, Y. Crosnier
7th European Workshop on Heterostructure Technology (HETECH), 1997, Julich, Germany. ⟨hal-01654288⟩
Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FETs
Didier Theron, B. Boudart, Christophe Gaquière, Georges Salmer, M. Lipka, B. Splingart, Erhard Kohn
IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997, londres, United Kingdom. ⟨hal-01649377⟩
Porous silicon modelled as idealised quantum dots
Christophe Delerue, Michel Lannoo, Guy Allan
CANHAM L. Properties of porous silicon, The Institution of Electrical Engineers, London, UK, pp.212, 1997. ⟨hal-00132027⟩
Systems of silicon nanocrystallites: from optical to transport properties
Christophe Delerue, Guy Allan, Michel Lannoo
International Materials Research Congress, Cancun’97, 1997, Cancun, Mexico. ⟨hal-03316860⟩
La diode Gunn planaire à injection MESFET, un nouveau composant pour l'optoélectronique ?
F. Driouch, M.R. Friscourt, Christophe Dalle
6émes Journées Nationales Microélectronique et Optoélectronique III-V, 1997, Chantilly, France. ⟨hal-00005304⟩
High-resolution seismic prospecting of old gypsum mines. Evaluation of detection possibilites
Bogdan Piwakowski, Jean-Marc Watelet, David Moreaux
European Journal of Environmental and Engineering, 1997, 2 (2), pp.109-118. ⟨ineris-00962701⟩
Theory of optical properties and recombination processes in porous silicon
Michel Lannoo, Guy Allan, Christophe Delerue
AMATO G., DELERUE C., VON BARDEBEN H.J. Structural and optical properties of porous silicon nanostructures, Gordon and Breach Science Publishers, pp.187, 1997. ⟨hal-00132029⟩
Characterisation of LT GaAs FET’s as a function of the temperature
Didier Theron, B. Boudart, Christophe Gaquière, Georges Salmer, M. Lipka, B. Splingart, Erhard Kohn
IEEE Workshop Experimentally based FET device modelling & Related nonlinear circuit design, 1997, Kassel, Germany. ⟨hal-01648141⟩
Projets et premiers résultats de modélisation et de technologie dans la filière HEMT GaN
Didier Theron, F. Dessenne, R. Fauquembergue, X. Hue, B. Boudart, Xavier Wallart, J. Laurens, Monique Constant
GDR Matériaux Grand Gap, 1997, Nice Sophia Antipolis, France. ⟨hal-01654458⟩