Publications

• Article dans une revue

Wafer-level vapor cells filled with laser-actuated hermetic seals for integrated atomic devices

Vincent Maurice, Clément Carlé, Shervin Keshavarzi, Ravinder Kumar Chutani, Samuel Queste, Ludovic Gauthier-Manuel, Jean-Marc Cote, Rémy Vicarini, Moustafa Abdel Hafiz, Rodolphe Boudot, Nicolas Passilly

Atomic devices such as atomic clocks and optically-pumped magnetometers rely on the interrogation of atoms contained in a cell whose inner content has to meet high standards of purity and accuracy. Glass-blowing techniques and craftsmanship have evolved over many decades to achieve such standards…

Microsystems & Nanoengineering, 2022, 8 (129), pp.13. ⟨10.1038/s41378-022-00468-x⟩. ⟨hal-04224417⟩

• Communication dans un congrès

Nanostructures wetting evaluation using ultra high frequency ultrasound

Abbas Salhab, Julien Carlier, Malika Toubal, Pierre Campistron, Marc Neyens, Bertrand Nongaillard, V. Thomy

Ultrasounds are a great tool for defects detection particularly for optically non-transparent materials. Hence, working at very high frequency (#GHz) allows the detection of nanoscale contact defects at the interface between two materials and especially in the presence of air, which has negligible…

SPIE OPTO conference 12002, Oxide-based Materials and Devices XIII, Jan 2022, San Francisco, United States. pp.58, ⟨10.1117/12.2620992⟩. ⟨hal-03620169⟩

• Communication dans un congrès

Ressaut circulaire hydraulique: comment prendre en compte la tension de surface?

Alexis Duchesne, Laurent Limat

Récemment, une nouvelle loi d’échelle a été observée par Bhagat et al. [1] pour modéliser les dépendances du rayon du ressaut circulaire hydraulique. Les auteurs ont attribué cette nouvelle loi à un terme de tension de surface manquant jusqu’à présent dans l’équation de conservation de l’énergie.…

25emes Rencontres du non-linéaire 2022, Mar 2022, Paris, France. ⟨hal-03607845⟩

• Article dans une revue

Frequency response optimization of P-I-N photodiode based on InGaAsN lattice matched to GaAs for High-Speed photodetection applications

R. Amraoui, Abdelkader Aissat, Jean-Pierre Vilcot, Didier Decoster

This paper reports on pin photodiode frequency response optimization based on InxGa1-xAs1-yNy quaternary lattice matched to GaAs. Two transparent layers are placed on p-side and n-side in order to manage the photodiode frequency response limitations. The lattice matching condition is calculated in…

Optics and Laser Technology, 2022, 145, pp.107468. ⟨10.1016/j.optlastec.2021.107468⟩. ⟨hal-03549621⟩

• Article dans une revue

Spectrum Sensing Using Software Defined Radio for Cognitive Radio Networks: A Survey

Julio Manco-Vasquez, Iyad Dayoub, Amor Nafkha, Mohammad Alibakhshikenari, Hayfa Ben Thameur

Cognitive radio (CR) network has emerged as a potential solution to the under-utilization problem of the allocated radio spectrum, where spectrum sensing (SS) plays a key role to enable the coexistence between primary and secondary users. It has attracted research interests, and several works have…

IEEE Access, 2022, 10, pp.131887-131908. ⟨10.1109/ACCESS.2022.3229739⟩. ⟨hal-03926173⟩

• Communication dans un congrès

When Solid State Chemistry meets Micro-electronics: New 3D micro-batteries

Pascal Roussel, Thierry Brousse, Christophe Lethien

Séminaire au laboratoire CRISMAT, 2022, Caen, France. ⟨hal-04303219⟩

• Article dans une revue

Picosecond acoustics versus tape adhesion test: Confrontation on a series of similar samples with a variable adhesion

A. Vital-Juarez, L. Roffi, J.-M. Desmarres, Arnaud Devos

A large number of methods have been developed to characterize the adhesion of a thin film to a substrate. Among them, tape test is still one of the most popular methods. Acoustic waves and especially ultra-high frequency acoustic waves are also sensitive to adhesion defects as they affect the way…

Surface and Coatings Technology, 2022, 448, pp.128926. ⟨10.1016/j.surfcoat.2022.128926⟩. ⟨hal-03814601⟩

• Article dans une revue

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than…

Micromachines, 2022, III–V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩. ⟨hal-03777891⟩

• Communication dans un congrès

Oscillations du ressaut hydraulique circulaire

Aurélien Goerlinger, Farzam Zoueshtiagh, Alexis Duchesne

25emes Rencontres du non-linéaire 2022, Mar 2022, Paris, France. ⟨hal-03607819⟩

• Article dans une revue

Embroidered Spoof Surface Plasmon Polariton Transmission Line for Wireless Body Sensor Network

Ali Ghaddar, Baptiste Garnier, François Rault, Eric Lheurette, Ludovic Burgnies

A wearable Spoof Surface Plasmon Polariton Transmission Line (SSPP TL) operating at 2.45 GHz designed for embroidery production and on-body communication is proposed. The SSPP TL supports both even and odd modes launched by near field coupling with a dipole antenna perpendicular and parallel to the…

IET Microwaves Antennas and Propagation, 2022, 16 (4), pp.187-193. ⟨10.1049/mia2.12224⟩. ⟨hal-03592149⟩