Publications

• Communication dans un congrès

Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

H. Koussir, Isabelle Lefebvre, Maxime Berthe, B. Grandidier, Pascale Diener, J. Tranchant, Benoit Corraze, Etienne Janod, Laurent Cario

The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals of the canonical Mott semiconductor GaMo4S8. The study is made using a…

Journées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2021, Nov 2021, Toulouse, France. ⟨hal-03606122⟩

• Communication dans un congrès

Détection d'attaques par signal de brouillage et identification de son éloignement

Jonathan Villain, Virginie Deniau, Christophe Gransart, Eric Pierre Simon, Anthony Fleury

Les réseaux sans fil Wi-Fi sont aujourd'hui dans tous les espaces, aussi bien publics que privés. Ils sont souvent utilisés pour accéder à des services ou assurer des fonctions opérationnelles à distance. Cependant, ces réseaux Wi-Fi peuvent être vulnérables et utilisés par des personnes…

CEM 2020, 20ème Colloque International et Exposition sur la Compatibilité ÉlectroMagnétique, Apr 2021, Lyon, France. 4p. ⟨hal-03264597⟩

• Article dans une revue

H-Band Substrate-Integrated Discrete-Lens Antenna for High Data Rate Communication Systems

Kossaila Medrar, Loïc Marnat, Laurent Dussopt, Cybelle Belem-Gonçalves, Guillaume Ducournau, Cyril Luxey, Frédéric Gianesello

A substrate-integrated discrete-lens antenna manufactured in standard printed-circuit-board (PCB) technology is demonstrated in H-band (225-325 GHz). The arrays composed of phase-shifting unit cells and a waveguide-fed planar focal source are designed on a single PCB stack with five metal layers…

IEEE Transactions on Antennas and Propagation, 2021, 69 (7), pp.3677-3688. ⟨10.1109/TAP.2020.3044382⟩. ⟨hal-03546303⟩

• Communication dans un congrès

Analysis of the Susceptibility of the LoRa Communication Protocol in the Railway Electromagnetic Environment

Virginie Deniau, Thomas Vantroys, Norbert Becuwe, Christophe Gransart, Artur Nogueira de Sao Jose, Alexandre Boé, Eric Pierre Simon, Olivier Vlamynck, Florent Valenti, Jonathan Villain, Quentin Rivette

In the context of the digital transformation of railway transportation systems, railway operators investigate the potentialities of the IoT (Internet of Things) in order to optimize the maintenance operations on the vehicles and the infrastructures. One of the interest is to use IoT communication…

URSI GASS 2021, XXXIV General Assembly and Scientific Symposium (GASS) of the International Union of Radio Science (URSI), Aug 2021, Rome, Italy. 4p. ⟨hal-03265936⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 10/3]

Raffaele Pisano

2021. ⟨hal-04510951⟩

• Article dans une revue

Oxygen vacancy engineering of TaO$_x$-based resistive memories by Zr doping for improved variability and synaptic behavior

João Palhares, Yann Beilliard, F. Alibart, Everton Bonturim, Daniel de Florio, Fabio Fonseca, Dominique Drouin, Andre Ferlauto

Resistive switching (RS) devices are promising forms of non-volatile memory. However, one of the biggest challenges for RS memory applications is the device-to-device (D2D) variability, which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (V$_O$) conductive…

Nanotechnology, 2021, 32 (40), pp.405202. ⟨10.1088/1361-6528/ac0e67⟩. ⟨hal-03539056⟩

• Communication dans un congrès

Single-pole-double-throw RF switches based on monolayer MoS₂

Myungsoo Kim, Emiliano Pallecchi, Henri Happy, Deji Akinwande

Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture [1] , [2] . To develop this ideal switch, non-volatile switches…

• Article dans une revue

A new equivalent circuit scheme for grounded back-to-back GCPW-MS-GCPW transitions fabricated on a thin low-k substrate

Pierre-Vincent Dugué, Mohammed El Gibari, Mathieu Halbwax, Stephane Ginestar, Vanessa Avramovic, Jean-Pierre Vilcot, Hong Wu Li

We hereby present a new equivalent circuit model including both lumped and distributed elements for GCPW-MS transitions (GCPW for Grounded CoplanarWaveguide and MS for Microstrip). In order to validate the modelling results, such transitions have been fabricated on a 20 μm-thick BCB (…

Progress In Electromagnetics Research Letters, 2021, 95, pp.33-42. ⟨10.2528/PIERL20093003⟩. ⟨hal-03054270⟩

• Article dans une revue

Heuristically accelerated reinforcement learning for channel assignment in wireless sensor networks

Mohamed Sahraoui, Azeddine Bilami, Abdelmalik Taleb-Ahmed

In wireless sensor networks (WSNs), multi-channel communication represents an attractive field due to its advantage in improving throughput and delivery rate. However, the major challenge that faces WSNs is the energy constraint. To overcome the channel assignment problem in an energy-efficient way…

International Journal of Sensor Networks, 2021, 37 (3), pp.159. ⟨10.1504/IJSNET.2021.118877⟩. ⟨hal-03501786⟩

• Article dans une revue

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Flavien Cozette, Bilal Hassan, Christophe Rodriguez, Eric Frayssinet, Rémi Comyn, François Lecourt, Nicolas Defrance, Nathalie Labat, François Boone, Ali Soltani, Abdelatif Jaouad, Yvon Cordier, Hassan Maher

This paper reports on the fabrication of an enhancement-mode AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor with a new barrier epi-layer design based on double Al 0.2 Ga 0.8 N barrier layers separated by a thin GaN layer. Normally-off transistors are achieved with good…

Semiconductor Science and Technology, 2021, 36 (3), pp.034002. ⟨10.1088/1361-6641/abd489⟩. ⟨hal-03341284⟩