Publications

Affichage de 4911 à 4920 sur 16279


  • Article dans une revue

Resistive nickel temperature sensor integrated into short-gate length AlGaN/GaN HEMT dedicated to RF applications

Flavien Cozette, Marie Lesecq, Adrien Cutivet, N. Defrance, Michel Rousseau, Hassan Maher, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2018, 39 (10), pp.1-1. ⟨10.1109/LED.2018.2864643⟩. ⟨hal-02273384⟩

  • Article dans une revue

AlN/ZnO/LiNbO 3 Packageless Structure as a Low-Profile Sensor for Potential On-Body Applications

Cécile Floer, Sami Hage-Ali, Sergei Zhgoon, Mohammed Moutaouekkil, Florian Bartoli, Harshad Mishra, Stefan Mc Murtry, Philippe Pigeat, Thierry Aubert, Olivier Bou Matar, Abdelkrim Talbi, Omar Elmazria

Surface acoustic wave (SAW) sensors find their application in a growing number of fields. This interest stems in particular from their passive nature and the possibility of remote interrogation. Still, the sensor package, due to its size, remains an obstacle for some applications. In this regard,…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2018, 65 (10), pp.1925-1932. ⟨10.1109/TUFFC.2018.2839262⟩. ⟨hal-01941686⟩

  • Communication dans un congrès

[Invited] MEMS-based atomic force microscopy probes: from electromechanical to optomechanical vibrating sensors

Bernard Legrand, Lucien Schwab, Pierre Allain, Ivan Favero, Marc Faucher, Didier Theron, Benjamin Walter, Jean-Paul Salvetat, Sébastien Hentz, Guillaume Jourdan

Scanning probe microscopy has been one of the most important instrumental discoveries during the last quarter of the last century. In particular, atomic force microscopy (AFM) is a cross-disciplinary technique able to provide sample morphology down to the atomic scale. It offers invaluable tools to…

AVS 65th International Symposium & Exhibition, American Vacuum Society, Oct 2018, Long Beach, United States. ⟨hal-01908666⟩

  • Article dans une revue

Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

T. Demonchaux, K. K. Sossoe, M. M. Dzagli, J. P. Nys, Maxime Berthe, David Troadec, A. Addad, M. Veillerot, G. Patriarche, H. J. Von Bardeleben, M. Schnedler, Christophe Coinon, Isabelle Lefebvre, M. A. Mohou, D. Stievenard, Jean-Francois Lampin, Ph. Ebert, X. Wallart, B. Grandidier

While nonstoichiometric binary III-V compounds are known to contain group-V antisites, the growth of ternary alloys consisting of two group-V elements might give additional degrees of freedom in the chemical nature of these antisites. Using cross-sectional scanning tunneling microscopy (STM), we…

Physical Review Materials, 2018, 2 (10), pp.104601. ⟨10.1103/PhysRevMaterials.2.104601⟩. ⟨hal-01912292⟩