Publications

Affichage de 6401 à 6410 sur 16550


  • Communication dans un congrès

Development of a reference wafer for on-wafer testing of extreme impedance devices

H. Votsi, I. Roch-Jeune, Kamel Haddadi, C. Li, Gilles Dambrine, P. H. Aaen, N. Ridler

This paper describes the design, fabrication, and testing of an on-wafer substrate that has been developed specifically for measuring extreme impedance devices using an on-wafer probe station. Such devices include carbon nano-tubes (CNTs) and structures based on graphene which possess impedances in…

88th ARFTG Microwave Measurement Symposium, ARFTG 2016, Dec 2016, Austin, United States. 4 p., ⟨10.1109/ARFTG.2016.7839719⟩. ⟨hal-03224658⟩

  • Article dans une revue

Wetting characterization of high aspect ratio nanostructures by gigahertz acoustic reflectometry

Christophe Virgilio, Julien Carlier, Pierre Campistron, Malika Toubal, Philippe Garnier, L. Broussous, V. Thomy, Bertrand Nongaillard

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real challenge in integrated circuits manufacturing. In fact, bad or non-uniform wetting during wet processes limits chemical reactions and can lead to non-complete etching or cleaning inside the patterns and device…

International Journal of Mechanical and Mechatronics Engineering, 2016, 10 (3), pp.413-418. ⟨hal-03560404⟩

  • Communication dans un congrès

Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges

Julien Borrel, Louis Hutin, Helen Grampeix, Emmanuel Nolot, Magali Tessaire, Guillaume Rodriguez, Yves Morand, Fabrice Nemouchi, Magali Gregoire, Emmanuel Dubois, Maud Vinet

In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.

IWJT 2016 - 16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19. ⟨hal-03325000⟩

  • Communication dans un congrès

New Optical Approach of SAW Delay Line Characterization

Lyes Djoumi, Nikolay Smagin, Meddy Vanotti, Dame Fall, Etienne Herth, Marc Duquennoy, Mohammadi Ouaftouh, Virginie Blondeau-Patissier, Frédéric Jenot

Surface acoustic wave devices are usually characterized solely through their electrical parameters. Mechanical displacements can also be numerically computed using finite element software. In this paper, we show that this characterization can be supplemented using an interferometer system capable…

30th Eurosensors Conference, EUROSENSORS XXX, Sep 2016, Budapest, Hungary. pp.838-843. ⟨hal-03586205⟩

  • Article dans une revue

On-chip and freestanding elastic carbon films for micro-supercapacitors

Peihua Huang, Christophe Lethien, Sébastien Pinaud, Kevin Brousse, Raphaël Laloo, Viviane Turq, Marc Respaud, Arnaud Demortiere, Barbara Daffos, Pierre-Louis Taberna, Bruno Chaudret, Yury Gogotsi, Patrice Simon

Integration of electrochemical capacitors with silicon-based electronics is a major challenge, limiting energy storage on a chip. We describe a wafer-scale process for manufacturing strongly adhering carbide-derived carbon films and interdigitated micro-supercapacitors with embedded titanium…

Science, 2016, 351 (6274), pp.691-695. ⟨10.1126/science.aad3345⟩. ⟨hal-01489186⟩

  • Article dans une revue

Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

K.K. Sossoe, Corentin Durand, L. Mathey, T. Alphazan, A. Sylla, M.M. Dzagli, A. Mohou, J.P. Nys, Maxime Berthe, C. Thieuleux, C. Coperet, J.P. Barnes, B. Grandidier

Microelectronic Engineering, 2016, 149, pp.125-128. ⟨10.1016/j.mee.2015.10.002⟩. ⟨hal-02084763⟩

  • Communication dans un congrès

Graphene field effect transistors on flexible substrate : stable process and high RF performance

Wei Wei, Emiliano Pallecchi, Mohamed Moez Belhaj, Alba Centeno, Amaia Zurutuza, Dominique Vignaud, Henri Happy

We report a simple and low temperature fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with 300 nm gate length and different channel width (12 mu m and 24 mu m) were successfully fabricated on Kapton substrate. We report asmeasured…

11th European Microwave Integrated Circuits Conference, EuMIC 2016, Oct 2016, London, United Kingdom. pp.165-168, ⟨10.1109/EuMIC.2016.7777516⟩. ⟨hal-03335833⟩

  • Article dans une revue

Nanodiamond–PMO for two-photon PDT and drug delivery

Chiara Mauriello-Jimenez, Nikola Z. Knezevic, Yolanda Galan Rubio, Sabine Szunerits, Rabah Boukherroub, Florina Teodorescu, Jonas G. Croissant, Ouahiba Hocine, Martina Seric, Laurence Raehm, Vanja Stojanovic, Dina Aggad, Marie Maynadier, Marcel Garcia, Magali Gary-Bobo, Jean-Olivier Durand

Journal of Materials Chemistry B: Materials for Biology and Medicine, 2016, 4, pp.5803-5808. ⟨10.1039/c6tb01915c⟩. ⟨hal-01357876⟩