Publications

Affichage de 681 à 690 sur 16273


  • Article dans une revue

ScAlN/GaN-on-Si (111) HEMTs for RF applications

Seif El Whibi, Nagesh Bhat, Yassine Fouzi, Nicolas Defrance, Jean-Claude de Jaeger, Zahia Bougrioua, Florian Bartoli, Maxime Hugues, Yvon Cordier, Marie Lesecq

ScAlN is a promising barrier material for next generation RF high electron mobility transistors, outperforming AlGaN thanks a higher 2-dimensional electron gas (2DEG) density and a thinner barrier with a lower lattice mismatch with GaN. A sub-10 nm barrier ScAlN/GaN heterostructure, grown by…

Applied Physics Express, 2025, 18 (4), pp.046501. ⟨10.35848/1882-0786/adc5db⟩. ⟨hal-05008937⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 14/3]

Raffaele Pisano

2025. ⟨hal-05480617⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 14/1]

Raffaele Pisano

2025. ⟨hal-05480621⟩

  • Ouvrages

An Intellectual History of Science in the Renaissance. Cultural and Fundamental Frameworks. Vol. 1

Raffaele Pisano

Springer, In press. ⟨hal-04859393⟩