Publications

• Article dans une revue

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, David Troadec, Jean-Paul Salvestrini, A. Ougazzaden

This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM…

Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00815384⟩

• Article dans une revue

Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Physica B: Condensed Matter, 2013, 412, pp.126-129. ⟨10.1016/j.physb.2012.11.031⟩. ⟨hal-00796437⟩

• Article dans une revue

GaAs Fabry-Perot cavity photoconductors : switching with picojoule optical pulses

Emilien Peytavit, S. Formont, Jean-Francois Lampin

Electronics Letters, 2013, 49, pp.207-208. ⟨10.1049/el.2012.3993⟩. ⟨hal-00796471⟩

• Article dans une revue

Modeling of high contrast partially electroded resonators by means of a polynomial approach

P.M. Rabotovao, F.E. Ratolojanahary, Jean-Etienne Lefebvre, A. Raherison, L. Elmaimouni, Tadeusz Gryba, J.G. Yu

Journal of Applied Physics, 2013, 114 (12), pp.124502. ⟨10.1063/1.4821768⟩. ⟨hal-00877665⟩

• Article dans une revue

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

F. Fromm, M.H. Oliveira, A. Molina-Sanchez, M. Hundhausen, J.M.J. Lopes, H. Riechert, L. Wirtz, T. Seyller

We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of…

New Journal of Physics, 2013, 15, pp.043031-1-11. ⟨10.1088/1367-2630/15/4/043031⟩. ⟨hal-00823434⟩

• Article dans une revue

High quality factor mg-scale silicon mechanical resonators for 3-mode optoacoustic parametric amplifiers

F.A. Torres, P. Meng, L. Ju, C. Zhao, D.G. Blair, K.-Y. Liu, S. Chao, M. Martyniuk, Isabelle Roch-Jeune, R. Flaminio, C. Michel

Milligram-scale resonators have been shown to be suitable for the creation of 3-mode optoacoustic parametric amplifiers, based on a phenomena first predicted for advanced gravitational-wave detectors. To achieve practical optoacoustic parametric devices, high quality factor resonators are required…

Journal of Applied Physics, 2013, 114, pp.014506. ⟨10.1063/1.4812731⟩. ⟨in2p3-00859697⟩

• Communication dans un congrès

A novel mesoscopic phenomenon : an analog of the Braess paradox in 2DEG networks

H. Sellier, M. Pala, S. Baltazar, P. Liu, B. Hackens, F. Martins, X. Wallart, L. Desplanque, V. Bayot, S. Huant

16th International Conference on Modulated Semiconductor Structures, MSS-16, 2013, Wroclaw, Poland. ⟨hal-00878505⟩

• Communication dans un congrès

Application of magnetoelastic materials as active elements in ultrasonic WPC-tomography of liquids flows

Y.V. Pylnov, Philippe Pernod, V.L. Preobrazhensky, Y.I. Kutlubaeva, Nikolay Smagin, P.N. Shirkovsky

International Conference on Functional Materials, ICFM 2013, 2013, Partenit, Crimea, Ukraine. ⟨hal-00878514⟩

• Article dans une revue

Ion-beam etching on nanostructured La2Ti2O7 piezoelectric thin films

A. Ferri, S. Saitzek, G. Declercq, J. Costecalde, Denis Remiens, D. Deresmes, David Troadec, R. Desfeux

Journal of the American Ceramic Society, 2013, 96, pp.3877-3882. ⟨10.1111/jace.12626⟩. ⟨hal-00918880⟩

• Chapitre d'ouvrage

Phononic band structures and transmission coefficients : methods and approaches

Jerome O. Vasseur, P.A. Deymier, A. Sukhovich, B. Merheb, Anne-Christine Hladky, M.I. Hussein

Deymier P.A. Acoustic metamaterials and phononic crystals, Springer Berlin Heidelberg, chapter 10, 329-372, 2013, ISBN 978-3-642-31231-1, e-ISBN 978-3-642-31232-8. ⟨10.1007/978-3-642-31232-8_10⟩. ⟨hal-00800627⟩