Publications

Affichage de 7731 à 7740 sur 16285


  • Communication dans un congrès

News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩

  • Communication dans un congrès

Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩

  • Article dans une revue

Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz

A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, Michel Rousseau, M. Chmielowska, M. Ramdani, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩. ⟨hal-00809856⟩

  • Communication dans un congrès

Giant piezoresistance in silicon nanowires

A.C.H. Rowe, J.S. Milne, S. Arscott

Materials Research Society Spring Meeting, MRS Spring 2013, Symposium Q : Surfaces of Nanoscale Semiconductors, 2013, San Francisco, CA, United States. ⟨hal-00811788⟩

  • Article dans une revue

Theoretical approach to the feasibility of power-line communication in aircrafts

Virginie Degardin, I. Junqua, M. Lienard, Pierre Degauque, S. Bertuol

IEEE Transactions on Vehicular Technology, 2013, 62, pp.1362-1366. ⟨10.1109/TVT.2012.2228245⟩. ⟨hal-00812342⟩

  • Communication dans un congrès

RF power potential of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, Christophe Gaquière, D. Gloria

This paper reports on the first RF microwave power characterization of High-k metal gate 28 nm CMOS devices. Measurement was performed on Load-pull configuration using a Nonlinear Vector Network Analyzer (NVNA) associated with a passive tuner at the fundamental frequency of 10 GHz. Behavior of…

International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9057, 181-184, ⟨10.1109/SMICND.2013.6688649⟩. ⟨hal-00922406⟩

  • Ouvrages

Lazare and Sadi Carnot. A Scientific and Filial Relationship. 1st ed

Charles C. Gillispie, Raffaele Pisano

Springer, 2013, 978-94-007-4144-7. ⟨hal-04515868⟩

  • Communication dans un congrès

RF-MEMS reconfigurable GaAs MMICs and antennas for microwave/MM-wave applications

R. Malmqvist, R. Jonsson, C. Samuelsson, A. Gustafsson, S. Reyaz, D. Dancila, A. Rydberg, B. Grandchamp, S. Seok, M. Fryziel, P.A. Rolland, P. Rantakari, M. Lahti, T. Vaha-Heikkla, R. Baggen

This paper presents the results of some reconfigurable RF-MEMS switching circuits and antennas fabricated using GaAs MMIC and LTCC based processes. Wafer-level packaged GaAs RF-MEMS series and shunt switches demonstrating low losses (≤0.5 dB) up to 40 GHz are presented together with a compact Ka-…

International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9056, 83-88, ⟨10.1109/SMICND.2013.6688097⟩. ⟨hal-00922405⟩