Publications

• Communication dans un congrès

Wetting performance on patterned substrates : experimental and numerical study

X.M. Xu, G. Vereecke, G. Pourtois, S. Armini, C. Chen, N. Verellen, T. Delande, G. Doumen, F. Kentie, X.P. Shi, I. Simms, K. Nafus, K. Tsai, E. van den Hogen, H. Yang, S. Suhard, Y.K. Siew, V. Moshchalkov, J. Indekeu, Bertrand Nongaillard, Julien Carlier, Pierre Campistron, V. Thomy, F. Holsteyns, H. Struyf, S. de Gendt

Partners Technical Week, 2013, Leuven, Belgium. ⟨hal-00823436⟩

• Article dans une revue

Electro-(de)wetting on superhydrophobic surfaces

F. Lapierre, Yannick Coffinier, Rabah Boukherroub, V. Thomy

Langmuir, 2013, 29, pp.13346-13351. ⟨10.1021/la4026848⟩. ⟨hal-00903761⟩

• Autre publication scientifique

Modélisation numérique de l'application de forces mécaniques aux biomolécules

Raghvendra Pratap Singh

2013. ⟨hal-00903766⟩

• Communication dans un congrès

Low work function thin film growth for high efficiency thermionic energy converter : coupled Kelvin probe and photoemission study of potassium oxide

François Morini, Emmanuel Dubois, J.F. Robillard, S. Monfray, T. Skotnicki

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium C - Advanced thermoelectrics : from materials to devices, 2013, Strasbourg, France. ⟨hal-00819702⟩

• Communication dans un congrès

In-situ growth of PbS nanoparticles on ZnO nanowires and nanowalls for 3rd generation solar cells

Basma El Zein, M. Abulekimu, S. Boulfrad, R. Sougrat, El Hadj Dogheche, G.E. Jabbour

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium D - Advanced inorganic materials and structures for photovoltaics, 2013, Strasbourg, France. ⟨hal-00819704⟩

• Communication dans un congrès

[Invited] SOI technologies for high-performance flexible electronics

Emmanuel Dubois

Joint 7th International Workshop ''Functional Nanomaterials and Devices'' and 2nd Ukrainian-French Seminar ''Semiconductor-on-insulator materials, devices and circuits : physics, technology & diagnostic'', 2013, Kyiv, Ukraine. ⟨hal-00819468⟩

• Article dans une revue

Ultrafast short-range disordering of femtosecond-laser-heated warm dense aluminum

P. M. Leguay, A. Levy, B. Chimier, F. Deneuville, D. Descamps, C. Fourment, C. Goyon, S. Hulin, S. Petit, O. Peyrusse, J. J. Santos, P. Combis, B. Holst, V. Recoules, P. Renaudin, L. Videau, F. Dorchies

We have probed, with time-resolved x-ray absorption near-edge spectroscopy (XANES), a femtosecond-laser-heated aluminum foil with fluences up to 1 J/cm2. The spectra reveal a loss of the short-range order in a few picoseconds. This time scale is compared with the electron-ion equilibration time,…

Physical Review Letters, 2013, 111 (24), ⟨10.1103/PhysRevLett.111.245004⟩. ⟨hal-01561843⟩

• Article dans une revue

Ferromagnetism induced in ZnO nanorods by morphology changes under a nitrogen–carbon atmosphere

Brigitte Sieber, Jarno Salonen, Ermei Makila, Mikko Tenho, Markku Heinonen, Hannu Huhtinen, Petriina Paturi, Edwin Kukk, Guillaume Perry, Ahmed Addad, Myriam Moreau, Luc Boussekey, Rabah Boukherroub

RSC Advances, 2013, 3 (31), pp.12945. ⟨10.1039/c3ra41008k⟩. ⟨hal-02388422⟩

• Communication dans un congrès

Rotational temperatures in RF plasma of Ar-H2O mixtures at low and moderated pressure

Adriana Annusova, Jaroslav Krištof, Corinne Foissac, Pavel Veis, Philippe Supiot

An Ar-H2O discharge with Ar content from 0 to 95 % at 67 and 266 Pa have been studied by optical emission spectroscopy. The plasma was excited at 27 MHz by a helical cavity with a power set at 30 W. The rotational temperatures of N2(C3Πu) and OH(A2 Σ + ) emitters were determined through spectral…

XXXI International Conference on Phenomena in Ionized Gases, XXXI ICPIG, 2013, Granada, Spain. paper PS1-036, 4 p. ⟨hal-00922590⟩

• Communication dans un congrès

A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC

A. Gustafsson, C. Samuelsson, R. Malmqvist, S. Seok, M. Fryziel, N. Rolland, B. Grandchamp, T. Vähä-Heikkilä, R. Baggen

This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0- level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6…

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC06-2, 432-435. ⟨hal-00922494⟩