Publications

Affichage de 8911 à 8920 sur 16120


  • Communication dans un congrès

Transport in quantum dots made from InAs nanowires

A. Ghaddar, P. Caroff, David Troadec, X. Wallart, D. Stiévenard, R. Leturcq

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591403⟩

  • Article dans une revue

Interacting Lewis-X carbohydrates in condensed phase : a first-principles molecular dynamics study

R. Zucca, M. Boero, C. Massobrio, C. Molteni, F. Cleri

Journal of Physical Chemistry B, 2011, 115, pp.12599-12606. ⟨10.1021/jp2055816⟩. ⟨hal-00783405⟩

  • Communication dans un congrès

Nanofils et énergie : un domaine en forte expansion

Pere Roca I Cabarrocas, C. Lethien, Thierry Brousse, N. Guillet, A. Gruss, Agnès Bonvilain, G. Savelli, J. Stockholm, Luc Brohan, S. Perraud, T. Pauporte

Séminaire Annuel de l'Observatoire des Micro et Nanotechnologies, 2011, Paris, France. ⟨hal-00574515⟩

  • Article dans une revue

Nanostructured polyaniline-based composites for ppb range ammonia sensing

J.L. Wojkiewicz, V.N. Bliznyuk, S. Carquigny, N. Elkamchi, N. Redon, T. Lasri, A.A. Pud, S. Reynaud

Sensors and Actuators B: Chemical, 2011, 160, pp.1394-1403. ⟨10.1016/j.snb.2011.09.084⟩. ⟨hal-00783484⟩

  • Chapitre d'ouvrage

GaN-based on large diameter Si substrate for next generation of high power/high temperature devices

F Medjdoub

Iniewski K. Nano-semiconductors : devices and technology, CRC Press, chapter 16, 461-484, 2011, ISBN 978-1-4398-4835-7. ⟨hal-00799648⟩

  • Communication dans un congrès

Impact of gate length on pulsed IV characteristics of passivated InAlN/GaN HFETs

M. Heuken, A. Vescan, F. Lecourt, H. Behmenburg, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, H. Kalisch, N. Ketteniss

9th International Conference on Nitride Semiconductors, ICNS-9, 2011, Glasgow, United Kingdom. ⟨hal-00807610⟩