Publications

• Autre publication scientifique

Modélisation de la croissance des nanofils de Si et métrologie à l'échelle atomique de la composition des nanofils

Wanghua Chen

2011. ⟨hal-00799437⟩

• Autre publication scientifique

Optimisation des transmissions sur réseaux filaires (CPL, ADSL) et application aux transmissions vidéo haute définition

Patrick Corlay

2011. ⟨hal-00799484⟩

• Autre publication scientifique

Etude, conception et réalisation de transitions verticales coaxiales pour une intégration hétérogène 3D de microsystèmes en gamme millimétrique

Romain Crunelle

2011. ⟨hal-00799390⟩

• Communication dans un congrès

Low loss zero-level packaging for high frequency RF applications by using PerMX film photoresist

J. Kim, S. Seok, N. Rolland, P. Rolland

41st European Microwave Conference, EuMC 2011, 2011, Manchester, United Kingdom. pp.273-276. ⟨hal-00799974⟩

• Chapitre d'ouvrage

GaN-based on large diameter Si substrate for next generation of high power/high temperature devices

F Medjdoub

Iniewski K. Nano-semiconductors : devices and technology, CRC Press, chapter 16, 461-484, 2011, ISBN 978-1-4398-4835-7. ⟨hal-00799648⟩

• Communication dans un congrès

Phase-controlling properties in phononic crystals

N. Swinteck, S. Bringuier, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, P.A. Deymier

1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, NM, United States. Paper Phononics-2011-0069, 164-165. ⟨hal-00799670⟩

• Article dans une revue

A metal-metal Fabry-Pérot cavity photoconductor for efficient GaAs terahertz photomixers

Emilien Peytavit, Christophe Coinon, Jean-Francois Lampin

Journal of Applied Physics, 2011, 109 (1), pp.016101. ⟨10.1063/1.3525709⟩. ⟨hal-00572645⟩

• Article dans une revue

[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices

H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu

The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2 -capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For…

IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩

• Article dans une revue

Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory

D. Ziegler, P. Gava, J. Güttinger, F. Molitor, L. Wirtz, M. Lazzeri, A.M. Saitta, A. Stemmer, Francesco Mauri, C. Stampfer

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.235434-1-7. ⟨10.1103/PhysRevB.83.235434⟩. ⟨hal-00639882⟩

• Article dans une revue

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

M. Gassoumi, S. Saadaoui, M.M. Ben Salem, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2011, 55, pp.30101-1-4. ⟨10.1051/epjap/2011110136⟩. ⟨hal-00639884⟩