Publications

• Communication dans un congrès

Caractérisation et analyse des effets de pièges électriques sur la fiabilité de HEMTS AlGaN/GaN

F. Berthet, Y. Guhel, H. Galous, B. Boudart, J.L. Trolet, M. Piccione, V. Sbrugnera, B. Grimbert, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.4C3, 1-4. ⟨hal-00603136⟩

• Communication dans un congrès

Amélioration des performances électriques en régime statique et hyperfréquence de transistors HEMTs pseudomorphiques de la filière GaAs en utilisant des rayonnements ionisants

F. Berthet, Y. Guhel, H. Galous, B. Boudart, J.L. Trolet, M. Piccione, N. Vellas, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.6E9, 1-4. ⟨hal-00603138⟩

• Communication dans un congrès

Influence du retournement temporel sur la localisation au sein d'un réseau ad hoc

Michael Bocquet, Christophe Loyez, M. Friziel, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 51, 6F3, 1-4. ⟨hal-00603135⟩

• Article dans une revue

Artificial magnetic properties of dielectric metamaterials in terms of effective circuit model

L.Y. Liu, J.B. Sun, X.J. Fu, J. Zhou, Q. Zhao, B. Fu, J.P. Liao, D. Lippens

Progress In Electromagnetics Research, 2011, 116, pp.159-170. ⟨10.2528/PIER11033004⟩. ⟨hal-00603007⟩

• Article dans une revue

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

An evaluation of the gate capacitance of a fieldeffect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report…

IEEE Transactions on Nanotechnology, 2011, 10 (5), pp.1172-1179. ⟨10.1109/TNANO.2011.2123913⟩. ⟨hal-00639857⟩

• Article dans une revue

Controlling gigahertz and terahertz surface electromagnetic waves with metamaterial resonators

Wenchen Chen, J.J. Mock, D.R. Smith, Tahsin Akalin, Willie J. Padilla

We computationally and experimentally investigate the use of metamaterial resonators as bandpass filters and other components that enable control of guided surface electromagnetic waves. The guided surface electromagnetic wave propagates on a planar Goubau line, launched via a coplanar waveguide…

Physical Review X, 2011, 1, pp.0210162. ⟨10.1103/PhysRevX.1.021016⟩. ⟨hal-00783536⟩

• Communication dans un congrès

Strain relaxation of GaSb islands on GaP and GaAs substrates for highmobility AlSb/InAs heterostructures

S. El Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799994⟩

• Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled…

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩

• Communication dans un congrès

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium D : Compound semiconductors for energy applications and environmental sustainability, 2011, San Francisco, CA, United States. pp.143-148, ⟨10.1557/opl.2011.841⟩. ⟨hal-00799993⟩

• Communication dans un congrès

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩. ⟨hal-00799795⟩