Publications

• Article dans une revue

Band structures tunability of bulk 2D phononic crystals made of magneto-elastic materials

Jerome O. Vasseur, Olivier Bou Matar, J.F. Robillard, Anne-Christine Hladky, P.A. Deymier

AIP Advances, 2011, 1, pp.041904-1-12. ⟨10.1063/1.3676172⟩. ⟨hal-00783382⟩

• Article dans une revue

Atomic scale investigation of silicon nanowires and nanoclusters

Manuel Roussel, W.H. Chen, Etienne Talbot, Rodrigue Lardé, E. Cadel, F. Gourbilleau, B. Grandidier, D. Stievenard, Philippe Pareige

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and…

Nanoscale Research Letters, 2011, 6, pp.271-1-6. ⟨10.1186/1556-276X-6-271⟩. ⟨hal-00597078⟩

• Article dans une revue

Improved micromachining of all SU-8 3D structures for a biologically-inspired flying robot

X.Q. Bao, Thomas Dargent, Sébastien Grondel, J.B. Paquet, Eric Cattan

Microelectronic Engineering, 2011, 88, pp.2218-2224. ⟨10.1016/j.mee.2011.01.065⟩. ⟨hal-00795914⟩

• Communication dans un congrès

Phase change memory as synapse for ultra-dense neuromorphic systems: application to complex visual pattern extraction

Manan Suri, Olivier Bichler, Damien Querlioz, Olga Cueto, Luca Perniola, Véronique Sousa, Dominique Vuillaume, Christian Gamrat, Barbara Desalvo

We demonstrate a unique energy efficient methodology to use Phase Change Memory (PCM) as synapse in ultra-dense large scale neuromorphic systems. PCM devices with different chalcogenide materials were characterized to demonstrate synaptic behavior. Multi-physical simulations were used to interpret…

IEEE International Electron Devices Meeting (IEDM 2011), Dec 2011, Washington, DC, United States. ⟨10.1109/IEDM.2011.6131488⟩. ⟨hal-00799997⟩

• Communication dans un congrès

[Invité] Physique du champ de bulles de cavitation au voisinage d'une surface vibrante à fort niveau d'excitation

Bertrand Dubus, C. Granger, C. Campo-Pozuelo, C. Vanhille

1ères Journées Ultrasons : Sonochimie & Procédés, 2011, Grenoble, France. ⟨hal-00807111⟩

• Communication dans un congrès

Improved Green's functions algorithms for the modeling of semiconductor nanostructures and devices

Y.M. Niquet, C. Delerue

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium YY : Computational semiconductor materials science, 2011, San Francisco, CA, United States. ⟨hal-00807250⟩

• Communication dans un congrès

Numerical and experimental negative refraction of longitudinal waves in an elastic phononic

Charles Croënne, Anne-Christine Hladky, Jerome O. Vasseur, Bertrand Dubus, B. Morvan, D. Manga, A. Tinel

10th Anglo-French Physical Acoustics Conference, AFPAC'11, 2011, Fréjus, France. ⟨hal-00574513⟩

• Article dans une revue

Tunability of aluminum nitride acoustic resonators: a phenomenological approach

Emmanuel Defay, Nizar Ben Hassine, Patrick Emery, Guy Parat, Julie Abergel, Arnaud Devos

A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to 2.062 GHz at +200…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2011, 58, pp.2516-2520. ⟨10.1109/TUFFC.2011.2114⟩. ⟨hal-00783414⟩

• Communication dans un congrès

Guide d'onde à fentes pour la détection des chutes sur les voies ferroviaires

A. Mroue, M. Heddebaut, Fouzia Boukour, Atika Rivenq

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 169, 2E19, 1-4. ⟨hal-00603130⟩

• Communication dans un congrès

Impact of gate length on the device performance of passivated InAlN/GaN HFET

N. Ketteniss, F. Lecourt, H. Behmenburg, A. Noculak, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, A. Vescan

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Italy. pp.1-2. ⟨hal-00603114⟩