Publications

Affichage de 9771 à 9780 sur 16292


  • Article dans une revue

Replication of the Trouton-Noble experiment

R. Gabillard, C. Semet, P. Cornille, C. Bizouard

Chinese Journal of Physics, 2010, 48, pp.427-438. ⟨hal-00549477⟩

  • Article dans une revue

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M.A. Poisson, S. Delage, P. Pristawko, C. Skierbiszewski

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated…

Journal of Applied Physics, 2010, 107 (2), pp.024504. ⟨10.1063/1.3291101⟩. ⟨hal-00549452⟩

  • Article dans une revue

Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate : analysis by two-dimensional tangential finite element method

Freddy Ponchel, J. Midy, Jean-François Legier, Caroline Soyer, Denis Remiens, T. Lasri, G. Gueguan

Journal of Applied Physics, 2010, 107, pp.054112-1-5. ⟨10.1063/1.3309423⟩. ⟨hal-00549504⟩

  • Article dans une revue

Development of a new generation of active AFM tools for applications in liquids

A.S. Rollier, D.F.L. Jenkins, El Hadj Dogheche, Bernard Legrand, M. Faucher, L. Buchaillot

Journal of Micromechanics and Microengineering, 2010, 20, pp.085010-1-11. ⟨10.1088/0960-1317/20/8/085010⟩. ⟨hal-00548990⟩

  • Communication dans un congrès

Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMTs

Laurent Chusseau, J. Torres, P. Nouvel, H. Marinchio, L. Varani, Jean-Francois Lampin, S. Bollaert, Yannick Roelens, D. Dolfi

SPIE Photonics West - OPTO : Quantum Sensing and Nanophotonic Devices VII, 2010, San Francisco, CA, United States. ⟨hal-01904174⟩

  • Communication dans un congrès

Pushing conventional SiGe HBT technology towards 'dotfive' terahertz

A. Chantre, P. Chevalier, T. Lacave, G. Avenier, M. Buczko, Y. Campidelli, L. Depoyan, L. Berthier, Christophe Gaquière

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.21-24. ⟨hal-00550010⟩

  • Article dans une revue

Enhanced high data rate communication system using embedded cooperative radar for intelligent transports systems

Yassin El Hillali, C. Tatkeu, P. Deloof, Laila Sakkila, Atika Rivenq, Jean-Michel Rouvaen

Transportation research. Part C, Emerging technologies, 2010, 18, pp.429-439. ⟨10.1016/j.trc.2009.05.013⟩. ⟨hal-00549912⟩

  • Article dans une revue

LP MOCVD growth of InAlN/GaN HEMT heterostructure : comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

M.A. Di Forte-Poisson, N. Sarazin, M. Magis, M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. Georgakilas, P. Kominou, M. Guziewicz, E. Kaminska, A. Piotrowska, Christophe Gaquière, M. Oualli, E. Chartier, E. Morvan, S. Delage

Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7, pp.1317-1324. ⟨10.1002/pssc.200983114⟩. ⟨hal-00549909⟩

  • Article dans une revue

Perfectly (001)- and (111)-oriented (Ba,Sr)TiO3 thin films sputtered on Pt/TiOx/SiO2/Si without buffer layers

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.350-352. ⟨10.1111/j.1551-2916.2009.03427.x⟩. ⟨hal-00549519⟩