Publications

• Communication dans un congrès

Radiation pattern measurements of an integrated TEM horn antenna

Jean-Francois Lampin, Guillaume Ducournau, Alexandre Beck, Damien Ducatteau, Emilien Peytavit, Tahsin Akalin

A TEM horn antenna is integrated with a uni-travelling-carrier photodiode. Its radiation pattern is measured from 280 to 540 GHz thanks to a 1.55 μm photomixing set-up and a sub-harmonic mixer. The direction the main lobe shifts to a lower incidence when the frequency is increased.

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612961⟩. ⟨hal-00549955⟩

• Communication dans un congrès

Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics

Yannick Roelens, A. Olivier, L. Desplanque, A. Noudeviwa, Francois Danneville, Nicolas Wichmann, X. Wallart, S. Bollaert

68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩. ⟨hal-00549924⟩

• Communication dans un congrès

100mV noise performances of Te-doped Sb-HEMT

A. Noudeviwa, A. Olivier, Yannick Roelens, Francois Danneville, Nicolas Wichmann, N. Waldhoff, L. Desplanque, X. Wallart, S. Bollaert

8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩. ⟨hal-00549922⟩

• Article dans une revue

An ontology-based framework for geospatial clustering

Xin Wang, Wei Gu, Danielle Ziébelin, Howard J. Hamilton

no abstract

International Journal of Geographical Information Science, 2010, 24 (11), pp.1601-1630. ⟨hal-00953146⟩

• Article dans une revue

Improved dielectric properties of Bi1.5Zn1.0Nb1.5O7/(111)-oriented Ba0.6Sr0.4TiO3 bilayered films for tunable microwave applications

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1215-1217. ⟨10.1111/j.1551-2916.2009.03516.x⟩. ⟨hal-00549505⟩

• Article dans une revue

Label-free analysis of water-polluting parasite by electrochemical impedance spectroscopy

T. Houssin, J. Follet, A. Follet, E. Dei-Casa, V. Senez

Biosensors and Bioelectronics, 2010, 25, pp.1122-1129. ⟨10.1016/j.bios.2009.09.039⟩. ⟨hal-00549495⟩

• Communication dans un congrès

Effets du facteur d'émission spontanée et de la densité de courant sur le temps de retard des lasers à cascades quantiques

A. Hamadou, D. Nehari, S. Lamari, Jean-Luc Thobel

International Conference on Optics, Photonics and their Applications, ICOPA 2010, 2010, Algiers, Algérie. ⟨hal-00591741⟩

• Communication dans un congrès

Design and fabrication of a 45GHz MMIC oscillator based on InP/GaAsSb/InP DHBT process

Sylvain Laurent, Antonio Augusto Lisboa de Souza, Jean-Christophe Nallatamby, Michel Prigent, Virginie Nodjiadjim, Muriel Riet

This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was fabricated by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-μm-long two-finger emitter. The complete nonlinear modeling of…

Workshop on (INMMIC) 2010, Apr 2010, Göteborg, Sweden. pp.54-57, ⟨10.1109/INMMIC.2010.5480139⟩. ⟨hal-00606461⟩

• Communication dans un congrès

Caractérisation Ultrasonore de Plaques PoroViscoElastiques à l'Aide des Termes de Transition

Serge Derible, Pierre Campistron, Georges Freiha, Hervé Franklin, Bertrand Nongaillard

Nous présentons les résultats de la mesure des termes de transition, issus des coefficients de réflexion et de transmission d'une onde acoustique par et à travers des plaques poreuses. Ces termes permettent de séparer les contributions symétriques et anti symétriques des vibrations des…

10ème Congrès Français d'Acoustique, Apr 2010, Lyon, France. ⟨hal-00551191⟩

• Article dans une revue

DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector

Z. Xu, N. Saadsaoud, Malek Zegaoui, Wan Khai Loke, Kianhuan Tan, S. Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer,…

IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩. ⟨hal-00549004⟩