Publications

Affichage de 12771 à 12780 sur 16555


  • Article dans une revue

MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

Dmitri Yarekha, S. Godey, X. Wallart, H. Colder, M. Zaknoune, F. Mollot

Journal of Crystal Growth, 2007, 301-302, pp.217-220. ⟨10.1016/j.jcrysgro.2006.11.235⟩. ⟨hal-00285630⟩