Publications

Affichage de 7101 à 7110 sur 16549


  • Article dans une revue

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, Jessica Bousquet, M.P. Alegre, J.C. Pinero, D. Araujo, F. Jomard, Ali Soltani, Jean-Claude de Jaeger, J. Morse, J. Härtwig, Nicolas Tranchant, C. Mer-Calfati, Jean-Charles Arnault, Julien Delahaye, Thierry Grenet, David Eon, Franck Omnès, Julien Pernot, Etienne Bustarret

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white…

Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩

  • Communication dans un congrès

Silicon nanotweezers inside liquid for the real time characterization of DNA degradation under radiotherapy treatment

Grégoire Perret, T. Lacornerie, V. Kumemura, N. Lafitte, H. Guillou, L. Jalabert, E. Lartigau, T. Fujii, Fabrizio Cleri, H. Fujita, Dominique Collard

Tumor cell killing by γ-ray beams in radiotherapy is currently based on a rather empirical understanding of the basic mechanisms and effectiveness of DNA damage by radiation. On the other hand, the mechanical behavior of DNA, e.g., sequence-sensitivity, elastic vs. plastic response, is well…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium N - Converging technology for nanobio-applications, 2014, Lille, France. ⟨hal-00966166⟩

  • Article dans une revue

Control of the ionization state of three single donor atoms in silicon

B. Voisin, M. Cobian, X. Jehl, M. Vinet, Yann-Michel Niquet, Christophe Delerue, Silvano de Franceschi, M. Sanquer

By varying the front-gate and the substrate voltages in a short silicon-on-insulator trigate field-effect transistor, we control the ionization state of three arsenic donors. We obtain good quantitative agreement between three-dimensional electrostatic simulations and experiment for the control…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89, pp.161404. ⟨10.1103/PhysRevB.89.161404⟩. ⟨hal-00981141⟩

  • Communication dans un congrès

[Invité] Oxydes fonctionnels pour les mémoires résistives : du matériau au composant

F. Alibart

Journées Nationales du GdR OXYFUN " Oxydes fonctionnels : du matériau au dispositif ", 2014, Autrans, France. ⟨hal-01055002⟩

  • Communication dans un congrès

Atomic switch : fonctionnalités synaptiques et stratégies d'intégration

Selina La Barbera, David Guérin, Dominique Vuillaume, F. Alibart

Journées NeuroSTIC 2014, 2014, Cergy-Pontoise, France. ⟨hal-01055039⟩

  • Communication dans un congrès

[Invité] Echelle nanométrique et grandes longueurs d'onde : un mariage fructueux ?

Jean-Francois Lampin

Workshop 'Les Nanos au coeur du THz et du MIR', 2014, Paris, France. ⟨hal-01044786⟩

  • Communication dans un congrès

A synthesis of theoretical and experimental study on power line communication over an aircraft tree-shaped network

Virginie Degardin, Pierre Laly, M. Lienard, Pierre Degauque

This paper gives an overview of the theoretical and experimental approach which has been carried out in order to study the feasibility of broadband power line communication in aircraft. The network which has been chosen corresponds to part of a cabin lighting system and whose tree shape…

2014 XXXIth URSI General Assembly and Scientific Symposium (URSI GASS), Aug 2014, Beijing, China. E06 - EMC in Wired and Wireless Systems, paper E06.1, 4 p., ⟨10.1109/URSIGASS.2014.6929522⟩. ⟨hal-03514441⟩

  • Communication dans un congrès

Intégration hétérogène de systèmes communicants CMOS-SOI en gamme millimétrique

Justine Philippe, Aurélien Lecavelier, Francois Danneville, Daniel Gloria, Emmanuel Dubois

Depuis plusieurs années, l'électronique flexible permet de fabriquer à faible coût des dispositifs souples sur de grandes surfaces. Cependant, les performances de ce type de circuit sont actuellement limitées par les faibles mobilités de ces matériaux (de l'ordre du cm².V-1.s-1), rendant…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01020278⟩