Publications

Affichage de 8641 à 8650 sur 16549


  • Article dans une revue

Non-contact thickness gauging of a thin film using surface waves and a void effect on their propagation

Sabrina Fourez, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Measurement Science and Technology, 2012, 23, pp.085608-1-8. ⟨10.1088/0957-0233/23/8/085608⟩. ⟨hal-00790376⟩

  • Article dans une revue

Hall-effect measurements of sol-gel derived CuInS2 thin films for photovoltaic applications

Bourlier Yoan, Rémy Bernard, C. Lethien, Pascal Roussel, Malek Zegaoui, Mohamed Bouazaoui, N. Rolland, Paul-Alain Rolland

CuInS2 thin films were prepared via the sol-gel process. X-ray diffraction (XRD) studies reveal that the thin films are well crystallized and they crystallize in a chalcopyrite phase. Hall-effect measurements were carried out, for the first time, on chalcopyrite CuInS2 films elaborated by the sol-…

Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (12), pp.125801-1-3. ⟨10.1143/APEX.5.125801⟩. ⟨hal-00786913⟩

  • Article dans une revue

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

  • Article dans une revue

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

  • Article dans une revue

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩

  • Article dans une revue

High power density performances of SiGe HBT from BiCMOS technology at W-band

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière

IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩

  • Article dans une revue

Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study

V. Mortet, L. Zhang, M. Eckert, J. d'Haen, A. Soltani, M. Moreau, David Troadec, E. Neyts, Jean-Claude de Jaeger, J. Verbeeck, A. Bogaerts, G. van Tendeloo, K. Haenen, P. Wagner

Physica Status Solidi A (applications and materials science), 2012, 209, pp.1675-1682. ⟨10.1002/pssa.201200581⟩. ⟨hal-00788174⟩