Publications

Affichage de 3441 à 3450 sur 16434


  • Article dans une revue

Mm-wave through-load element for on-wafer measurement applications

Marc Margalef-Rovira, Olivier Occello, Abdelhalim Saadi, Vanessa Avramovic, Sylvie Lepilliet, Loïc Vincent, Manuel J. Barragan, Emmanuel Pistono, Sylvain Bourdel, Christophe Gaquière, Philippe Ferrari

This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50-Ω load depending on a DC control voltage. Among other potential applications, this system can be used to…

IEEE Transactions on Circuits and Systems I: Regular Papers, 2021, 68 (8), pp.3170-3183. ⟨10.1109/TCSI.2021.3072097⟩. ⟨hal-03202213⟩

  • Communication dans un congrès

[Invited workshop] Nanorobotic On-Wafer Probe Station Under Scanning Electron Microscope

Kamel Haddadi

15th European Microwave Week - Workshop Measurements at mmWave and Terahertz Frequencies of Three Measurement Quantities: S-Parameters, Power, and Complex Permittivity of Dielectric Materials, Jan 2021, Utrecht, Netherlands. ⟨hal-03582098⟩

  • Chapitre d'ouvrage

Chapter 6. Exploring and talking about music

Arthur Paté, Pascal Gaillard

Sensory Experiences - Exploring meaning and the senses, 24, John Benjamins Publishing Company, pp.213-247, 2021, Converging Evidence in Language and Communication Research, 9789027209801. ⟨10.1075/celcr.24.06pat⟩. ⟨hal-03619356⟩

  • Article dans une revue

High-Q silicon nitride drum resonators strongly coupled to gates

Xin Zhou, Srisaran Venkatachalam, Ronghua Zhou, Hao Xu, Alok Pokharel, Andrew Fefferman, Mohammed Zaknoune, Eddy Collin

Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration…

Nano Letters, 2021, 21 (13), pp.5738-5744. ⟨10.1021/acs.nanolett.1c01477⟩. ⟨hal-03263144⟩

  • Communication dans un congrès

Bias-dependence of surface charge at low temperature in GaN self-switching diodes

E. Perez-Martin, I. Iniguez-De-La-Torre, T. Gonzalez, Christophe Gaquière, J. Mateos

In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence…

13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Sevilla, Spain. pp.90-93, ⟨10.1109/CDE52135.2021.9455737⟩. ⟨hal-03362256⟩