Publications

• Communication dans un congrès

Cavity modes and optomechanic interactions in phoxonic crystals

Said El-Jallal, M. Oudich, Yan Pennec, Bahram Djafari-Rouhani

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944047⟩

• Article dans une revue

Addition of HfO$_2$ interface layer for improved synaptic performance of phase change memory (PCM) devices

M. Suri, O. Bichler, Q. Hubert, L. Perniola, V. Sousa, C. Jahan, D. Vuillaume, C. Gamrat, B. de Salvo

In this work, we will focus on the use of phase change memory (PCM) to emulate synaptic behavior in emerging neuromorphic system-architectures. In particular, we will show that the performance and energy-efficiency of large scale neuromorphic systems can be improved by engineering individual PCM…

Solid-State Electronics, 2013, 79, pp.227-232. ⟨10.1016/j.sse.2012.09.006⟩. ⟨hal-00795982⟩

• Article dans une revue

A crown-ether loop-derivatized oligothiophene doubly attached on gold surface as cation-binding switchable molecular junction

T.K. Tran, K. Smaali, M. Hardouin, Q. Bricaud, M. Oçafrain, P. Blanchard, S. Lenfant, S. Godey, J. Roncali, D. Vuillaume

A crown-ether dithiol quaterthiophene is synthesized and immobilized on gold surface by double covalent fixation. UV-vis spectroscopy and cyclic voltammetry show that the corresponding dithioester precursor can complex Pb2+ in solution and that this property is maintained for monolayers of the…

Advanced Materials, 2013, 25, pp.427-431. ⟨10.1002/adma.201201668⟩. ⟨hal-00796399⟩

• Communication dans un congrès

Ajout d'un recuit dédié à la réduction de la résistance extrinsèque de base dans les TBH SiGe:C DPSA-SEG

Elodie Canderle

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957780⟩

• Communication dans un congrès

Caractérisation et modélisation en petit signal de transistor bipolaire à hétérojonction Si/SiGe:C jusqu'à 220 GHz

Marina Deng

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957773⟩

• Article dans une revue

AlGaN/GaN HEMTs on silicon substrate with 206-GHz FMAX

S. Bouzid-Driad, H. Maher, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Renvoise, P. Frijlink

IEEE Electron Device Letters, 2013, 34, pp.36-38. ⟨10.1109/LED.2012.2224313⟩. ⟨hal-00796433⟩

• Article dans une revue

Temperature and damping effects on the frequency dependence of electrostatic force microscopy force gradients

R. Arinero, J. Trasobares, Pascal Girard, M. Ramonda, N. Clément

In this paper we demonstrate that depending on the surrounding ambient, which may be manifested by different damping conditions, a "bump" in frequency response of Electric Force Microscope (EFM) cantilevers may be observed, either in electrical amplitude or phase signals of AC gradients.…

Journal of Applied Physics, 2013, 114 (21), pp.214315. ⟨10.1063/1.4843835⟩. ⟨hal-00916277⟩

• Article dans une revue

Acoustic wave localization in one-dimensional Fibonacci phononic structures with mirror symmetry

Anne-Christine Hladky, Jerome O. Vasseur, S. Degraeve, C. Granger, M. de Billy

This paper reports on numerical and experimental results of acoustic transmission spectra of bead chains with symmetric and asymmetric Fibonacci-like structures. As a matter of comparison, perfect periodic acoustic waveguide structures are also examined. This study shows that Fibonacci structures…

Journal of Applied Physics, 2013, 113 (15), pp.154901. ⟨10.1063/1.4801890⟩. ⟨hal-00816416⟩

• Article dans une revue

How imperfect interfaces affect the nonlinear transport properties in composite nanomaterials

F. Pavanello, S. Giordano

Nanomaterials composed of a population of particles dispersed in a matrix represent the building block for the next generation of several technologies: energy storage and conversion, thermal management, electronics, and photovoltaics. When interfaces between particles and matrix are imperfect, the…

Journal of Applied Physics, 2013, 113 (15), pp.154310. ⟨10.1063/1.4801889⟩. ⟨hal-00818171⟩

• Article dans une revue

Vertical nanowire array-based field effect transistors for ultimate scaling

G. Larrieu, X.L. Han

Nanoscale, 2013, 5, pp.2437-2441. ⟨10.1039/C3NR33738C⟩. ⟨hal-00797210⟩