Publications

• Article dans une revue

Ricean K-factor and SNR estimation for M-PSK modulated signals using the fourth-order cross-moments matrix

I. Bousnina, M.B. Ben Salah, A. Samet, Iyad Dayoub

IEEE Communications Letters, 2012, 16, pp.1236-1239. ⟨10.1109/LCOMM.2012.061912.120708⟩. ⟨hal-00788185⟩

• Communication dans un congrès

Monolithic integration of Ge on SrTiO3 : mismatch accommodation for very heterogeneous epitaxial systems

B. Gobaut, J. Penuelas, A. Danescu, N. Blanc, V. Favre-Nicolin, G. Renaud, J. Wang, I. Lefebvre, G. Saint-Girons

European Materials Research Society Spring Meeting, E-MRS Spring 2012, Symposium M - More than Moore : novel materials approaches for functionalized silicon based microelectronics, 2012, Strasbourg, France. ⟨hal-00797762⟩

• Communication dans un congrès

Narrow linewidth tunable THz signal radiated by photomixing : coupling a unitravelling carrier photodiode and a two-axis dual-frequency laser

Alain Rolland, Guillaume Ducournau, Goulc'Hen Loas, Emilien Peytavit, Alexandre Beck, Tahsin Akalin, Mohamed Zaknoune, Jean-Francois Lampin, Marc Brunel, François Bondu, Marc Vallet, M. Alouini

Conference on Lasers and Electro-Optics, CLEO 2012, Laser Science to Photonic Applications, 2012, San Jose, CA, United States. paper CTu1B.3, 1-2. ⟨hal-00803101⟩

• Thèse

Contribution au développement de microcomposants pour la caractérisation ultrasonore en canal microfluidique sur silicium : modélisation de la propagation, Development of microcomponents for ultrasonic characterization in silicon based microchannel : propagation modeling

Assane Ndieguene

Les recherches menées pour le développement des microsystèmes ont permis d’améliorer considérablement la miniaturisation de certaines fonctions. Ces travaux, très multidisciplinaires, ont conduit à de nombreuses applications dans les domaines des télécommunications, de la chimie et de la biologie.…, The research activities for the development of microsystems enabled the downsizing of many functions. These multidisciplinary works concerns many applications in the fields of telecommunications, chemistry, and biology. In that context, our work concerned the conception and analyses of acoustical…

Micro et nanotechnologies/Microélectronique. Université de Valenciennes et du Hainaut-Cambrésis, 2011. Français. ⟨NNT : 2011VALE0033⟩. ⟨tel-03416217⟩

• Article dans une revue

Level repulsion and evanescent waves in sonic crystals

V. Romero-Garcia, Jerome O. Vasseur, Anne-Christine Hladky, Lluis Miquel Garcia-Raffi, J.V. Sanchez-Perez

This work theoretically and experimentally reports the evanescent connections between propagating bands in periodic acoustic materials. The complex band structures obtained by solving for the k(ω) problem reveal a complete interpretation of the propagation properties of these systems. The…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84, pp.212302-1-4. ⟨10.1103/PhysRevB.84.212302⟩. ⟨hal-00783380⟩

• Communication dans un congrès

The transverse electromagnetic horn antenna as an efficient THz pulse emitter

Jean-Francois Lampin, Emilien Peytavit, Tahsin Akalin, Guillaume Ducournau, Jens Klier, Sabine Wohnsiedler, Joachim Jonuscheit, René Beigang

We have fabricated a new photoconductive antenna based on a transverse electromagnetic horn and low temperature grown GaAs. It has been tested with a time-domain terahertz setup. The horn was used as the emitter and a standard dipole photoconductive antenna was used as the receiver. The spectrum…

International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu3D.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105067⟩. ⟨hal-00800486⟩

• Communication dans un congrès

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

Maher, Hassan, Vincent Delmouly, U. Rouchy, Michel Renvoisé, Peter Frijlink, Derek Smith, M. Zaknoune, Damien Ducatteau, Vanessa Avramovic, André Scavennec, Jean Godin, Muriel Riet, Cristell Maneux, Bertrand Ardouin

In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35μm and the base contact is…

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Dec 2011, Berlin, Germany. pp.Art n°68. ⟨hal-00671674⟩

• Article dans une revue

Sliding Droplets on Superomniphobic Zinc Oxide Nanostructures

Guillaume Perry, Yannick Coffinier, V. Thomy, Rabah Boukherroub

Langmuir, 2011, 28 (1), pp.389-395. ⟨10.1021/la2035032⟩. ⟨hal-02388424⟩

• Communication dans un congrès

Optimization of carrier multiplication in quantum dots for more efficient solar cells

Christophe Delerue, Guy Allan

Reviewing recent theoretical works, we propose a strategy to optimize the carrier multiplication in semiconductor quantum dots. This strategy is discussed using calculations on quantum dots of a semi-metal, α-Sn.

Workshop on Semiconductor Nanostructures for Photovoltaics, Dec 2011, Hangzhou, China. ⟨hal-00807253⟩

• Thèse

ELABORATION DE GRAPHENE PAR EPITAXIE PAR JETS MOLECULAIRES ET CARACTERISATION, GROWTH OF GRAPHENE BY MOLECULAR BEAM EPITAXY AND CHARACTERIZATION

Eléonore Moreau

Depuis les premiers travaux publiés en 2004, le graphène est obtenu par trois principales techniques, l'exfoliation, le dépôt chimique en phase vapeur et la graphitisation du carbure de silicium. Seules les deux dernières sont adaptées aux technologies standards de la microélectronique. Une…, Since the first publications in 2004, three techniques are mainly used to grow graphene, exfoliation, chemical vapor deposition and graphitization on silicon carbide. Only the two latter ones are suitable with microelectronics technological processes. In this thesis, another method of growth is…

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2011. Français. ⟨NNT : ⟩. ⟨tel-00665851⟩