Publications

Affichage de 10411 à 10420 sur 16434


  • Chapitre d'ouvrage

BAW-IC co-integration tunable filters at GHz frequencies

A. Cathelin, S. Razafimandimby, A. Kaiser

A.H.M. van Roermund, M. Steyaert, H. Casier. Analog circuit design : smart data converters, filters on chip, multimode transmitters, Springer-Verlag, pp.207-232, 2010. ⟨hal-00575846⟩

  • Chapitre d'ouvrage

Microtechnologies and micromanipulation

L. Buchaillot

Chaillet N., Régnier S. Microrobotics for micromanipulation, Wiley-ISTE, pp.335-368, 2010. ⟨hal-00575862⟩

  • Communication dans un congrès

MEMS-based multisensors platform with piezoelectric actuation and piezoresistive read-out capabilities for biosensing applications

Thomas Alava, Fabrice Mathieu, Denis Remiens, Caroline Soyer, Liviu Nicu

Biosensors 2010, 2010, Glasgow, United Kingdom. ⟨hal-00574487⟩

  • Communication dans un congrès

Design of waveguides in silicon phoxonic crystal slabs

Vincent Laude, J. C. Beugnot, Sarah Benchabane, Yan Pennec, Bahram Djafari-Rouhani, N. Papanikolaou, Alejandro Martinez

We consider the problem of designing waveguides in nanostructures presenting simultaneously phononic and photonic band gaps. We specifically opt for designs in perforated silicon membranes that can be conveniently obtained using silicon-on- insulator technology. Geometrical parameters for…

IEEE International Ultrasonics Symposium, Oct 2010, San Diego, CA, United States. pp.527-530, ⟨10.1109/ULTSYM.2010.5935703⟩. ⟨hal-00541910⟩

  • Article dans une revue

On Principles In Sadi Carnot’s Thermodynamics (1824). Epistemological Reflections

Raffaele Pisano

Almagest, 2010, 1 (2), pp.128-179. ⟨10.1484/J.ALMA.3.16⟩. ⟨hal-04507955⟩

  • Communication dans un congrès

Atomic scale dopant metrology in an individual silicon nanowire by atom probe tomography

W.H. Chen, Rodrigue Lardé, Emmanuel Cadel, T. Xu, J.P. Nys, B. Grandidier, D. Stiévenard, Philippe Pareige

In this work, the p-type silicon nanowires (SiNWs) are grown by the Chemical Vapor Deposition (CVD) method using gold as catalyst droplet, silane as precursor and diborane as dopant reactant and are analyzed at the atomic scale using the three dimensional laser assisted Atom Probe Tomography (APT…

Nanotechnology 2010 Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Jun 2010, Anaheim, CA, United States. pp.29-32. ⟨hal-01953261⟩

  • Article dans une revue

Low-temperature scanning tunneling microscopy study of self-assembled InAs quantum dots grown by droplet epitaxy

Corentin Durand, A. Peilloux, K. Suzuki, K. Kanisawa, B. Grandidier, K. Muraki

Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy. We compare two different growth processes, the well-known Stranski-Krastanow mode and the more recently studied droplet epitaxy mode. We show…

Physics Procedia, 2010, Proceedings of the 14th International conference on Narrow Gap Semiconductors and Systems, 3 (2), pp.1299-1304. ⟨10.1016/j.phpro.2010.01.180⟩. ⟨hal-00568565⟩