Publications

• Article dans une revue

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

L. Nougaret, H. Happy, Gilles Dambrine, Vincent Derycke, J.P. Bourgoin, A.A. Green, M.C. Hersam

This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80…

Applied Physics Letters, 2009, 94 (24), pp.243505. ⟨10.1063/1.3155212⟩. ⟨hal-00469685⟩

• Article dans une revue

Phonon surface mapping of graphite : disentangling quasi-degenerate phonon dispersions

A. Gruneis, J. Serrano, A. Bosak, M. Lazzeri, S.L. Molodtsov, L. Wirtz, Claudio Attaccalite, M. Krisch, A. Rubio, Francesco Mauri, T. Pichler

The two-dimensional mapping of the phonon dispersions around the K point of graphite by inelastic x-ray scattering is provided. The present work resolves the longstanding issue related to the correct assignment of transverse and longitudinal phonon branches at K. We observe an almost degeneracy of…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 80, pp.085423-1-5. ⟨10.1103/PhysRevB.80.085423⟩. ⟨hal-00473343⟩

• Article dans une revue

Light coupling between photonic crystal and standard photonic waveguides in a compact photonic integrated circuitry using 2D FDTD

S. Haxha, Iyad Dayoub, F. Abdelmalek, W. Aroua, J. Trombi, H. Bouchriha

Open Optics Journal, 2009, 3, pp.44-51. ⟨10.2174/1874328500903010044⟩. ⟨hal-00471828⟩

• Article dans une revue

Gate-recess technology for InAs/AlSb HEMTs

E. Lefebvre, M. Malmkvist, M. Borg, L. Desplanque, X. Wallart, Gilles Dambrine, S. Bollaert, J. Grahn

IEEE Transactions on Electron Devices, 2009, 56, pp.1904-1911. ⟨10.1109/TED.2009.2026123⟩. ⟨hal-00471908⟩

• Article dans une revue

Improved characterization methology for MOSFETs up to 220 GHz

N. Waldhoff, C. Andrei, D. Gloria, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine

IEEE Transactions on Microwave Theory and Techniques, 2009, 57, pp.1237-1243. ⟨10.1109/TMTT.2009.2017359⟩. ⟨hal-00471808⟩

• Article dans une revue

Recent progress in high-speed silicon-based optical modulators [Invited paper]

D. Marris-Morini, L. Vivien, G. Rasigade, J.M. Fedeli, E. Cassan, Xavier Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, Mathieu Halbwax, S. Laval

Proceedings of the IEEE, 2009, 97, pp.1199-1215. ⟨10.1109/JPROC.2009.2015337⟩. ⟨hal-00473046⟩

• Article dans une revue

Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

V.G. Dubrovskii, N.V. Sibirev, G.E. Cirlin, I.P. Soshnikov, W.H. Chen, R. Larde, E. Cadel, P. Pareige, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, M. Moewe, L.C. Chuang, C. Chang-Hasnain

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.205316-1-7. ⟨10.1103/PhysRevB.79.205316⟩. ⟨hal-00473095⟩

• Article dans une revue

Towards silicon-nanowire-structured materials by the intimate mixing of patterning the solid state and chemical reactions

D. Hourlier, Bernard Legrand, Christophe Boyaval, P. Perrot

Journal of Nano Research, 2009, 6, pp.215-224. ⟨10.4028/www.scientific.net/JNanoR.6.215⟩. ⟨hal-00471951⟩

• Article dans une revue

A 60 GHz six-port distance measurement system with sub-millimeter accuracy

Kamel Haddadi, M.M. Wang, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2009, 19, pp.644-646. ⟨10.1109/LMWC.2009.2029744⟩. ⟨hal-00472454⟩

• Article dans une revue

Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI

G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, N. Breil, Olivier Faynot

As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As$^+$) implantation.…

IEEE Electron Device Letters, 2009, 30 (12), pp.1266-1268. ⟨10.1109/LED.2009.2033085⟩. ⟨hal-00471974⟩