Publications

• Article dans une revue

Comparison of structural and electrical properties of PMN-PT films deposited on Si with different bottom electrodes

M. Detalle, Gang Wang, Denis Remiens, P. Ruterana, P. Roussel, B. Dkhil

PMN-PT (70/30) thin films were deposited by sputtering on silicon substrate covered with different bottom electrodes: TiOx/Pt and LaNiO3 (LNO). The bilayers TiOx/Pt are deposited by sputtering and the LNO layer by sol–gel. Whatever the bottom electrodes the perovskite phase appears at 400 °C; the…

Journal of Crystal Growth, 2007, 305 (1), pp.137-143. ⟨10.1016/j.jcrysgro.2007.04.020⟩. ⟨hal-00176607⟩

• Article dans une revue

On the use of ultrasounds to quantify the longitudinal threshold force to detach osteoblastic cells from a conditioned glass substrate

Dorothée Debavelaere-Callens, L. Peyre, Pierre Campistron, H.F. Hildebrand

Biomolecuar Engineering, 2007, 24, pp.521-525. ⟨10.1016/j.bioeng.2007.08.016⟩. ⟨hal-00285683⟩

• Article dans une revue

Calculation and measurement of the magnetostriction of multilayered composites

L. Garcia-Gancedo, S. Busbridge, Philippe Pernod, Vladimir Preobrazhensky, O. Ducloux

Journal of Magnetism and Magnetic Materials, 2007, 310, pp.2627-2629. ⟨10.1016/j.jmmm.2006.11.051⟩. ⟨hal-00285635⟩

• Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at…

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩

• Article dans une revue

1/f(gamma) tunnel current noise through Si-bound alkyl monolayers

N. Clement, S. Pleutin, O. Seitz, S. Lenfant, D. Vuillaume

We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. We observe a slight biasdependent background of the normalized…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 76, pp.205407-1-5. ⟨10.1103/PhysRevB.76.205407⟩. ⟨hal-00283050⟩

• Communication dans un congrès

2D and 3D pseudospectral time domain simulations of elastic waves propagation in nonlinear hysteretic heterogeneous solids : application to time reversal imaging of damaged materials

Olivier Bou Matar, T. Goursolle, S. dos Santos, S. Calle

19th International Congress on Acoustics, 2007, Madrid, Spain. ⟨hal-00286340⟩

• Communication dans un congrès

TEM study of the silicidation process in Pt/Si and Ir/Si structures

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, N. Breil, G. Larrieu, Emmanuel Dubois

Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials, MSMXV, 2007, Cambridge, United Kingdom. ⟨hal-00367363⟩

• Communication dans un congrès

Recent results on charge transport in molecular devices based on organic self-assembled monolayers

D. Vuillaume

10th International Conference on Advanced Materials, IUMRS-ICAM 2007, 2007, Bangalore, India. ⟨hal-00367335⟩

• Communication dans un congrès

Phase conjugate ultrasound waves in moving nonlinear media

Vladimir Preobrazhensky, Philippe Pernod, Y. Pyl'Nov

Proceedings of the 2007 International Congress on Ultrasonics, ICU 2007, 2007, Vienna, Austria. ⟨hal-00367044⟩

• Communication dans un congrès

Growth and characterization of AlInN/GaN field effect transistors

J.F. Carlin, F Medjdoub, M. Gonschorek, E. Feltin, M.A. Py, Christophe Gaquière, N. Grandjean, E. Kohn

Proceedings of the 7th International Conference of Nitride Semiconductors, ICNS-7, 2007, Las Vegas, NV, United States. ⟨hal-00367697⟩